R
Robert M. Wallace
Researcher at University of Texas at Dallas
Publications - 503
Citations - 41237
Robert M. Wallace is an academic researcher from University of Texas at Dallas. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Atomic layer deposition. The author has an hindex of 84, co-authored 499 publications receiving 37236 citations. Previous affiliations of Robert M. Wallace include Texas Instruments & University of Texas System.
Papers
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Journal ArticleDOI
Recombination Kinetics and Effects of Superacid Treatment in Sulfur- and Selenium-Based Transition Metal Dichalcogenides.
Matin Amani,Matin Amani,Peyman Taheri,Rafik Addou,Geun Ho Ahn,Geun Ho Ahn,Daisuke Kiriya,Daisuke Kiriya,Der Hsien Lien,Der Hsien Lien,Joel W. Ager,Robert M. Wallace,Ali Javey,Ali Javey +13 more
TL;DR: Detailed steady-state and transient optical characterization on some of the most heavily studied direct bandgap 2D materials, specifically WS2, MoS2, WSe2, and MoSe2 are performed over a large pump dynamic range to study the recombination mechanisms present in these materials.
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Air stable p-doping of WSe2 by covalent functionalization.
Peida Zhao,Peida Zhao,Daisuke Kiriya,Daisuke Kiriya,Angelica Azcatl,Chenxi Zhang,Mahmut Tosun,Mahmut Tosun,Yi-Sheng Liu,Mark Hettick,Mark Hettick,Jeong Seuk Kang,Jeong Seuk Kang,Stephen McDonnell,Santosh Kc,Jinghua Guo,Kyeongjae Cho,Robert M. Wallace,Ali Javey,Ali Javey +19 more
TL;DR: The work presents a platform for manipulating the electrical properties and band structure of TMDCs using covalent functionalization and predicts WSe(2):NO at the Se vacancy sites as the predominant dopant species.
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A roadmap for electronic grade 2D materials
Natalie Briggs,Shruti Subramanian,Zhong Lin,Xufan Li,Xufan Li,Xiaotian Zhang,Kehao Zhang,Kai Xiao,David B. Geohegan,Robert M. Wallace,Long Qing Chen,Mauricio Terrones,Aida Ebrahimi,Saptarshi Das,Joan M. Redwing,Christopher L. Hinkle,Kasra Momeni,Adri C. T. van Duin,Vin Crespi,Swastik Kar,Joshua A. Robinson +20 more
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Surface oxidation energetics and kinetics on MoS2 monolayer
TL;DR: In this paper, surface oxidation of monolayer MoS2 (one of the representative semiconductors in transition-metal dichalcogenides) has been investigated using density functional theory method.
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HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy
Ruoyu Yue,Adam T. Barton,Hui Zhu,Angelica Azcatl,Luis Fabián Peña,Jian Wang,Xin Peng,Ning Lu,Lanxia Cheng,Rafik Addou,Stephen McDonnell,Luigi Colombo,Julia W. P. Hsu,Jiyoung Kim,Moon J. Kim,Robert M. Wallace,Christopher L. Hinkle +16 more
TL;DR: The growth of HfSe2 thin films using molecular beam epitaxy demonstrates the feasibility and significant potential of fabricating 2D material based heterostructures with tunable band alignments for a variety of nanoelectronics and optoelectronic applications.