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Robert M. Wallace

Researcher at University of Texas at Dallas

Publications -  503
Citations -  41237

Robert M. Wallace is an academic researcher from University of Texas at Dallas. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Atomic layer deposition. The author has an hindex of 84, co-authored 499 publications receiving 37236 citations. Previous affiliations of Robert M. Wallace include Texas Instruments & University of Texas System.

Papers
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Recombination Kinetics and Effects of Superacid Treatment in Sulfur- and Selenium-Based Transition Metal Dichalcogenides.

TL;DR: Detailed steady-state and transient optical characterization on some of the most heavily studied direct bandgap 2D materials, specifically WS2, MoS2, WSe2, and MoSe2 are performed over a large pump dynamic range to study the recombination mechanisms present in these materials.
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Air stable p-doping of WSe2 by covalent functionalization.

TL;DR: The work presents a platform for manipulating the electrical properties and band structure of TMDCs using covalent functionalization and predicts WSe(2):NO at the Se vacancy sites as the predominant dopant species.
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Surface oxidation energetics and kinetics on MoS2 monolayer

TL;DR: In this paper, surface oxidation of monolayer MoS2 (one of the representative semiconductors in transition-metal dichalcogenides) has been investigated using density functional theory method.
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HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy

TL;DR: The growth of HfSe2 thin films using molecular beam epitaxy demonstrates the feasibility and significant potential of fabricating 2D material based heterostructures with tunable band alignments for a variety of nanoelectronics and optoelectronic applications.