R
Robert M. Wallace
Researcher at University of Texas at Dallas
Publications - 503
Citations - 41237
Robert M. Wallace is an academic researcher from University of Texas at Dallas. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Atomic layer deposition. The author has an hindex of 84, co-authored 499 publications receiving 37236 citations. Previous affiliations of Robert M. Wallace include Texas Instruments & University of Texas System.
Papers
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Journal ArticleDOI
Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy
Suresh Vishwanath,Xinyu Liu,Sergei Rouvimov,Leonardo Basile,Leonardo Basile,Ning Lu,Angelica Azcatl,Katrina Magno,Robert M. Wallace,Moon J. Kim,Juan Carlos Idrobo,Jacek K. Furdyna,Debdeep Jena,Huili Grace Xing +13 more
TL;DR: In this article, the authors present several of the firsts: first growth of MoTe2 by MBE, MoSe2 on Bi2Se3 SLs, transition metal dichalcogenide (TMD) SLs and lateral junction between a quintuple atomic layer of Bi2Te3 and a triple atomic layer in MoTe 2.
Journal ArticleDOI
Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation
Christopher L. Hinkle,A. M. Sonnet,Eric M. Vogel,Stephen McDonnell,G. Hughes,M. Milojevic,Bong-Ki Lee,Francisco S. Aguirre-Tostado,K. J. Choi,Jiyoung Kim,Robert M. Wallace +10 more
TL;DR: The method of surface preparation on n-type GaAs, even with the presence of an amorphous-Si interfacial passivation layer, is shown to be a critical step in the removal of accumulation capacitance frequency dispersion as mentioned in this paper.
Patent
Fluorinated coating for an optical element
TL;DR: In this paper, a halogenated material is used to form a chemical bond with the surface of the window of an optically transmissive window, which has a coating on one or both of its surfaces.
Patent
Anode plate for flat panel display having integrated getter
TL;DR: In this article, the getter material for an anode plate in a field emission flat panel display device is described. And the methods of fabricating the getters are described.
Journal ArticleDOI
WSe2-contact metal interface chemistry and band alignment under high vacuum and ultra high vacuum deposition conditions
Christopher M. Smyth,Rafik Addou,Stephen McDonnell,Stephen McDonnell,Christopher L. Hinkle,Robert M. Wallace +5 more
TL;DR: In this article, contact metals (Au, Ir, and Cr) are deposited on bulk WSe2 under UHV and HV conditions and subsequently characterized with x-ray photoelectron spectroscopy (XPS) to elucidate the effects of reactor base pressure on resulting interface chemistry and band alignment.