R
Robert M. Wallace
Researcher at University of Texas at Dallas
Publications - 503
Citations - 41237
Robert M. Wallace is an academic researcher from University of Texas at Dallas. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Atomic layer deposition. The author has an hindex of 84, co-authored 499 publications receiving 37236 citations. Previous affiliations of Robert M. Wallace include Texas Instruments & University of Texas System.
Papers
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Journal ArticleDOI
Controlling the Pd Metal Contact Polarity to Trigonal Tellurium by Atomic Hydrogen-Removal of the Native Tellurium Oxide
Journal ArticleDOI
Atomically Traceable Nanostructure Fabrication.
Josh B. Ballard,D. Dick,Stephen McDonnell,Maia Bischof,Joseph Fu,James H. G. Owen,William R. Owen,Justin D. Alexander,David L. Jaeger,Pradeep Namboodiri,Ehud Fuchs,Yves J. Chabal,Robert M. Wallace,Richard F. Reidy,Richard M. Silver,John N. Randall,James R. Von Ehr +16 more
TL;DR: A method for tracking atomically resolved and controlled structures from initial template definition through final nanostructure metrology is demonstrated, opening up a pathway for top-down atomic control over nanofabrication.
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Investigating interface states and oxide traps in the MoS2/oxide/Si system
Emma M. Coleman,Gioele Mirabelli,Pavel Bolshakov,Peng Zhao,Enrico Caruso,Farzan Gity,Scott Monaghan,K. Cherkaoui,K. Cherkaoui,K. Cherkaoui,V. Balestra,Robert M. Wallace,Chadwin D. Young,Ray Duffy,Paul K. Hurley,Paul K. Hurley +15 more
TL;DR: In this paper, the study of inverted metal-oxide semiconductor (MOS) structures formed through mechanical exfoliation of MoS2 flakes onto Al2O3 or SiO2 layers grown on degenerately doped p type silicon substrates is presented.
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Investigation of Tunneling Current in $\hbox{SiO}_{2}/ \hbox{HfO}_{2}$ Gate Stacks for Flash Memory Applications
Bhaswar Chakrabarti,Hee-Soo Kang,Barry Brennan,Tae Joo Park,Kurtis D. Cantley,A. Pirkle,Stephen McDonnell,Jiyoung Kim,Robert M. Wallace,Eric M. Vogel +9 more
TL;DR: Results indicate that thick HfO2 is not suitable for use in SiO-2-sub/HfO- 2-sub stacks for tunnel barrier engineering applications, and a method to improve the program current in these structures is proposed.
Journal ArticleDOI
Role of lanthanum in the gate stack: Co-sputtered TaLaN metal gates on Hf-based dielectrics
TL;DR: In this article, the authors examined the characteristics of TaLaN metal gates in direct contact with HfO"2 dielectric, in particular focusing on the effect of La in the gate stack for NMOS applications.