R
Robert M. Wallace
Researcher at University of Texas at Dallas
Publications - 503
Citations - 41237
Robert M. Wallace is an academic researcher from University of Texas at Dallas. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Atomic layer deposition. The author has an hindex of 84, co-authored 499 publications receiving 37236 citations. Previous affiliations of Robert M. Wallace include Texas Instruments & University of Texas System.
Papers
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In situ atomic layer deposition half cycle study of Al2O3 growth on AlGaN
TL;DR: In this article, the atomic layer deposition of Al2O3 on the native oxide and hydrofluoric acid treated Al0.25Ga0.75 N surface was studied using in situ X-ray photoelectron spectroscopy (XPS), after each individual half cycle of the ALD process.
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Thermally induced Zr incorporation into Si from zirconium silicate thin films
Manuel Quevedo-Lopez,M. El-Bouanani,Swarnagowri Addepalli,J. L. Duggan,Bruce E. Gnade,Robert M. Wallace,Mark R. Visokay,M. Douglas,M. J. Bevan,Luigi Colombo +9 more
TL;DR: In this article, the outdiffusion of Zr from the alternate gate dielectric candidate ZrSixOy thin films deposited on Si(100) was studied and a diffusion coefficient of D0∼2×10−15 cm2/s was estimated from the associated depth profiles.
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Selectivity of metal oxide atomic layer deposition on hydrogen terminated and oxidized Si(001)-(2×1) surface
Roberto C. Longo,Stephen McDonnell,D. Dick,Robert M. Wallace,Yves J. Chabal,James H. G. Owen,Josh B. Ballard,John N. Randall,Kyeongjae Cho +8 more
TL;DR: In this paper, the chemical composition and growth rate of HfO2, Al2O3, and TiO2 thin films grown by in-situ atomic layer deposition on both oxidized and hydrogen-terminated Si(001) surfaces were investigated.
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Dopant penetration studies through Hf silicate
Manuel Quevedo-Lopez,Manuel Quevedo-Lopez,Mark R. Visokay,James J. Chambers,M. J. Bevan,A. LiFatou,Luigi Colombo,M. J. Kim,Bruce E. Gnade,Robert M. Wallace +9 more
TL;DR: In this paper, the authors investigated the effect of N incorporation in Hf silicate (HfSixOyNz) on dopant penetration from doped polycrystalline silicon capping layers.
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Surface and Interfacial Reaction Study of Half Cycle Atomic Layer Deposited Al2O3 on Chemically Treated InP Surfaces
TL;DR: In this paper, the interfacial reactions between atomic layer deposited Al2O3 films on various chemically treated InP(100) surfaces have been investigated by in situ X-ray photoelectron spectroscopy at each half cycle in the deposition process.