R
Robert M. Wallace
Researcher at University of Texas at Dallas
Publications - 503
Citations - 41237
Robert M. Wallace is an academic researcher from University of Texas at Dallas. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Atomic layer deposition. The author has an hindex of 84, co-authored 499 publications receiving 37236 citations. Previous affiliations of Robert M. Wallace include Texas Instruments & University of Texas System.
Papers
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WSe (2−x) Te x alloys grown by molecular beam epitaxy
Adam T. Barton,Ruoyu Yue,Lee A. Walsh,Lee A. Walsh,Guanyu Zhou,Christopher R. Cormier,Christopher M. Smyth,Rafik Addou,Luigi Colombo,Robert M. Wallace,Christopher L. Hinkle,Christopher L. Hinkle +11 more
TL;DR: In this paper, the National Institute of Standards and Technology (Award Number 70NANB17H041); National Science Foundation (ECCS Award Numbers 1917025 and 1802166)
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The adsorption and thermal decomposition of PH3 on Si(111)-(7 × 7)
TL;DR: In this article, the adsorption of PH3 on Si(111)-(7 × 7) has been studied by Auger electron spectroscopy and temperature programmed desorption.
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Pattern transfer of hydrogen depassivation lithography patterns into silicon with atomically traceable placement and size control
Joshua B. Ballard,James H. G. Owen,William R. Owen,Justin Alexander,Ehud Fuchs,John N. Randall,James R. Von Ehr,Stephen McDonnell,D. Dick,Robert M. Wallace,Yves J. Chabal,Maia Bischof,David L. Jaeger,Richard F. Reidy,Joseph Fu,Pradeep Namboodiri,Kai Li,Richard M. Silver +17 more
TL;DR: In this paper, the authors demonstrate a method for tracking atomically resolved and controlled structures from initial template definition through final nanostructure metrology, opening up a pathway for top-down atomic control over nanofabrication.
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Hydrogen and deuterium incorporation and transport in hafnium-based dielectric films on silicon
R.P. Pezzi,L. Miotti,Karen Paz Bastos,Gabriel Vieira Soares,Carlos Driemeier,Israel Jacob Rabin Baumvol,Prakaipetch Punchaipetch,G. Pant,Bruce E. Gnade,Robert M. Wallace,Antonio L. P. Rotondaro,J.M. Visokay,James J. Chambers,Luigi Colombo +13 more
TL;DR: In this article, hydrogen and deuterium incorporation into nitrided and non-nitrided hafnium silicate films on Si during thermal annealing in H1-and H2-containing atmospheres was investigated.
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GaSb Oxide Thermal Stability Studied by Dynamic- XPS
TL;DR: In this paper, the thermal decomposition of the native GaSb oxides using time resolved x-ray photoelectron spectroscopy with a temperature resolution of better than 1 K was studied.