R
Robert M. Wallace
Researcher at University of Texas at Dallas
Publications - 503
Citations - 41237
Robert M. Wallace is an academic researcher from University of Texas at Dallas. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Atomic layer deposition. The author has an hindex of 84, co-authored 499 publications receiving 37236 citations. Previous affiliations of Robert M. Wallace include Texas Instruments & University of Texas System.
Papers
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Patterning and etching of amorphous teflon films
TL;DR: Amorphous Teflon, a low dielectric constant insulator for high performance interconnects, has been studied in this paper, where plasma etching and Zonyl FSN® fluorosurfactant are used to improve the adhesion of photoresist to amorphous teflon.
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Electronic properties of MoS2/MoOx interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts.
TL;DR: The results demonstrate that, due to the large work function of MoO3 and the relative band alignment with MoS2, together with small energy gap, the MoS 2/MoO3 interface is a good candidate for a tunnel field effect (TFET)-type device.
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Electrical properties of atomic-layer-deposited La2O3 films using a novel La formamidinate precursor and ozone
Bong-Ki Lee,Tae Joo Park,A. Hande,M. J. Kim,Robert M. Wallace,Jeong Hwan Kim,Xinye Liu,J. H. Yi,Huazhi Li,Mike Rousseau,Deo V. Shenai,J. Suydam +11 more
TL;DR: The dielectric constant of La"2O"3 films with a TaN metal gate is found to be ~29, which is higher than reported values for CVD and ALD.
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MBE growth of few-layer 2H-MoTe 2 on 3D substrates
Suresh Vishwanath,Suresh Vishwanath,Aditya Sundar,Xinyu Liu,Angelica Azcatl,Edward Lochocki,Arthur R. Woll,Sergei Rouvimov,Wan Sik Hwang,Ning Lu,Xin Peng,Huai-Hsun Lien,John Weisenberger,Stephen McDonnell,Stephen McDonnell,Moon J. Kim,Margaret Dobrowolska,Jacek K. Furdyna,Kyle Shen,Robert M. Wallace,Debdeep Jena,Debdeep Jena,Huili Grace Xing +22 more
TL;DR: In this article, the presence of excess Te incorporation in MBE grown few layer 2H-MoTe2 was found to be a good indicator of high electrical conductivity of MoTe2.
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Controlled growth of SiO2 tunnel barrier and crystalline Si quantum wells for Si resonant tunneling diodes
TL;DR: In this article, two methods for producing Si-oxide barriers upon which crystalline Si layers can be grown are presented; one method entails oxide island nucleation on a clean vicinal Si(001) surface, while the second method makes use of void formation in ultrathin oxides on the Si(100) surface at elevated temperatures.