Uzhhorod National University

About: Uzhhorod National University is a education organization based out in Uzhhorod, Ukraine. It is known for research contribution in the topics: Raman spectroscopy & Laser. The organization has 1089 authors who have published 1056 publications receiving 5187 citations. The organization is also known as: State Higher Education Establishment "Uzhhorod National University" & Uzhhorod State University.

Fully-screened polarization-induced electric fields in blue∕violet InGaN∕GaN light-emitting devices grown on bulk GaN

Abstract: Photocurrent spectroscopy and hydrostatic-pressure-dependent electroluminescence are used to show that heavy 1×1019cm−3 Si doping of quantum barriers is sufficient to achieve full screening of polarization-induced electric fields (PIEFs) in nitride light emitting diodes (LEDs) and laser diodes (LDs) with InGaN quantum wells. Furthermore, it is shown that at currents close to lasing threshold in nitride LDs injected charge alone is sufficient to achieve full screening of PIEFs. In contrast, full screening at low currents can only be accomplished via Si doping of quantum barriers.

Real-time atomic force microscopy imaging of photoinduced surface deformation in AsxSe100−x chalcogenide films

Abstract: We present direct measurements of the kinetics of surface relief gratings (SRGs) formation in amorphous AsxSe100−x (20≤xAs≤50) thin films. SRGs are induced in different holographic schemes of recording using near-band-gap light and their growth is further facilitated by illumination with an interference pattern and observed in real time by in situ atomic force microscopy. It is found that the kinetics of SRG formation depends upon film composition and incident light polarization. The light-stimulated vectorial surface deformations are maximized for Se-rich glasses and increase even further by additional illumination during recording.

Updated analysis of KRAS/NRAS and BRAF mutations in study 20050181 of panitumumab (pmab) plus FOLFIRI for second-line treatment (tx) of metastatic colorectal cancer (mCRC).

Abstract: 3568 Background: Previously, extended RAS analysis from this study showed a trend toward improvements in HR on OS and PFS with pmab + FOLFIRI vs FOLFIRI in WT RAS group vs WT KRAS exon 2 group. Her...

Laser-induced optical changes in amorphous multilayers

Abstract: It is shown that the well-known blue-shift of the fundamental absorption edge in as-deposited compositionally modulated amorphous Si/Ge and As6Se94/Se80Te20 multilayers (with periods of 4-8 nm) is further enhanced due to the thermal or laser-induced intermixing of adjacent layers. The laser-induced intermixing process, as supported by experiments and model calculations, can be attributed to both the local heating and photo-effects in As6Se94/Se80Te20 multilayers, while only the thermal effects were observed for Si/Ge multilayers. Structural transformations, based on this enhanced interdiffusion, provides good capability for spatially patterning optoelectronic devices and digital information recording.