Journal ArticleDOI
An MOS transistor model for analog circuit design
TLDR
A physically based model for the metal-oxide-semiconductor (MOS) transistor suitable for analysis and design of analog integrated circuits is presented.Abstract:
This paper presents a physically based model for the metal-oxide-semiconductor (MOS) transistor suitable for analysis and design of analog integrated circuits. Static and dynamic characteristics of the MOS field-effect transistor are accurately described by single-piece functions of two saturation currents in all regions of operation. Simple expressions for the transconductance-to-current ratio, the drain-to-source saturation voltage, and the cutoff frequency in terms of the inversion level are given. The design of a common-source amplifier illustrates the application of the proposed model.read more
Citations
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Proceedings ArticleDOI
A Systematic Approach Towards the Implementation of a Low-Noise Amplifier in Sub-Micron CMOS Technology
TL;DR: A new and systematic CAD approach for the design and tuning of LNAs in sub-micron CMOS technology is presented and resulting circuits are shown to exceed the given specifications confirming its usefulness to designers.
Journal ArticleDOI
Analog design optimization methodology for ultralow-power circuits using intuitive inversion-level and saturation-level parameters
TL;DR: In this article, a comprehensive design optimization methodology using intuitive nondimensional parameters of inversion-level and saturation-level is proposed, especially for ultralow-power, lowvoltage, and high-performance analog circuits with mixed strong, moderate, and weak inversion metaloxide-semiconductor transistor (MOST) operations.
Proceedings ArticleDOI
CMOS analog current-mode multiplier based on the advanced compact MOSFET model
TL;DR: This work presents a four-quadrant current-mode CMOS multiplier structure based on the advanced compact MOSFET (ACM) model, providing wide input range and improved linearity and compared with other current mode circuits regarding some performance features.
Proceedings ArticleDOI
Empirical model for the transconductance-current dependence of short-channel MOSFETs
TL;DR: The transconductance-current expression given by the Advanced Compact Model is reviewed and simple modification yields an expression which (with proper parametrization) captures the gm-I dependence of short-channel MOSFETs.
Proceedings ArticleDOI
Early voltage and saturation voltage improvement in deep sub-micron technologies using associations of transistors
TL;DR: The main characteristic of the T-Shaped Transistor is its trapezoidal nature, with no limit on the sizes of the unit composite transistors, providing lower output conductance and saturation voltage in comparison to regular configurations.
References
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Book
Operation and modeling of the MOS transistor
TL;DR: In this article, the MOS transistors with ION-IMPLANTED CHANNELS were used for CIRCUIT SIMULATION in a two-and three-tier MOS structure.
Journal ArticleDOI
An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications
TL;DR: In this article, a fully analytical MOS transistor model dedicated to the design and analysis of low-voltage, low-current analog circuits is presented, which exploits the inherent symmetry of the device by referring all the voltages to the local substrate.
Journal ArticleDOI
A g/sub m//I/sub D/ based methodology for the design of CMOS analog circuits and its application to the synthesis of a silicon-on-insulator micropower OTA
TL;DR: In this paper, a new design methodology based on a unified treatment of all the regions of operation of the MOS transistor is proposed for the design of CMOS analog circuits and especially suited for low power circuits where the moderate inversion region often is used.
Journal ArticleDOI
A charge-sheet model of the MOSFET
TL;DR: In this paper, the authors compared the Pao-Sah double-integral model with the charge sheet model for long-channel MOSFETs and found that the charge-sheet model is simpler to extend to two or three dimensions.