Journal ArticleDOI
An MOS transistor model for analog circuit design
TLDR
A physically based model for the metal-oxide-semiconductor (MOS) transistor suitable for analysis and design of analog integrated circuits is presented.Abstract:
This paper presents a physically based model for the metal-oxide-semiconductor (MOS) transistor suitable for analysis and design of analog integrated circuits. Static and dynamic characteristics of the MOS field-effect transistor are accurately described by single-piece functions of two saturation currents in all regions of operation. Simple expressions for the transconductance-to-current ratio, the drain-to-source saturation voltage, and the cutoff frequency in terms of the inversion level are given. The design of a common-source amplifier illustrates the application of the proposed model.read more
Citations
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Proceedings ArticleDOI
A MOSFET-only voltage source with arbitrary sign adjustable temperature coefficient
TL;DR: In this paper, a MOS-diode biased by a constant inversion level current source is used to predict the temperature slope of a simple MOSFET-only circuit that implements a voltage source with linear temperature dependence.
Proceedings ArticleDOI
Extraction of electrical parameters of floating gate devices for circuit analysis, simulation, and design
TL;DR: In this article, the authors proposed a structured methodology to extract the electrical parameters of floating gate devices, which can be applied for the characterization of both flash memories and multiple-input FG devices.
Journal IssueDOI
Analog circuit design by nonconvex polynomial optimization: Two design examples
TL;DR: A nonconvex optimization problem is formed, which is then efficiently solved through convex programming techniques based on linear matrix inequality (LMI) relaxation, which allows both polynomial inequality and equality constraints, thereby facilitating more accurate device modelings and parameter tuning.
Journal ArticleDOI
A CMOS Resizing Methodology for Analog Circuits
TL;DR: A CMOS resizing methodology for analog circuits during a technology migration, with easy-to-apply scaling rules based on a simple MOS transistor model, to transpose a circuit topology from one technology to another while preserving the main figures of merit.
Journal ArticleDOI
A high-swing MOS cascode bias circuit
TL;DR: In this article, the aspect ratio of the transistors in the bias circuit in order to maximize the output voltage swing was determined starting from the saturation voltage and from the current density of the cascode stage.
References
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Book
Operation and modeling of the MOS transistor
TL;DR: In this article, the MOS transistors with ION-IMPLANTED CHANNELS were used for CIRCUIT SIMULATION in a two-and three-tier MOS structure.
Journal ArticleDOI
An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications
TL;DR: In this article, a fully analytical MOS transistor model dedicated to the design and analysis of low-voltage, low-current analog circuits is presented, which exploits the inherent symmetry of the device by referring all the voltages to the local substrate.
Journal ArticleDOI
A g/sub m//I/sub D/ based methodology for the design of CMOS analog circuits and its application to the synthesis of a silicon-on-insulator micropower OTA
TL;DR: In this paper, a new design methodology based on a unified treatment of all the regions of operation of the MOS transistor is proposed for the design of CMOS analog circuits and especially suited for low power circuits where the moderate inversion region often is used.
Journal ArticleDOI
A charge-sheet model of the MOSFET
TL;DR: In this paper, the authors compared the Pao-Sah double-integral model with the charge sheet model for long-channel MOSFETs and found that the charge-sheet model is simpler to extend to two or three dimensions.