Journal ArticleDOI
An MOS transistor model for analog circuit design
TLDR
A physically based model for the metal-oxide-semiconductor (MOS) transistor suitable for analysis and design of analog integrated circuits is presented.Abstract:
This paper presents a physically based model for the metal-oxide-semiconductor (MOS) transistor suitable for analysis and design of analog integrated circuits. Static and dynamic characteristics of the MOS field-effect transistor are accurately described by single-piece functions of two saturation currents in all regions of operation. Simple expressions for the transconductance-to-current ratio, the drain-to-source saturation voltage, and the cutoff frequency in terms of the inversion level are given. The design of a common-source amplifier illustrates the application of the proposed model.read more
Citations
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Proceedings ArticleDOI
Modeling Nanoscale Depletion Mode MESFET and Comparative Study for Different Semiconductor Materials
TL;DR: In this article , the authors presented a study on the modeling of nanoscale MESFETs, which uses a Schottky barrier or rectifying contact to reduce fabrication inconvenience by removing the necessity of an oxide layer in a FET.
Proceedings ArticleDOI
Design-oriented model for short-channel MOS transistors based on inversion charge
Dayana A. Pino-Monroy,Patrick Scheer,M. Bouchoucha,Carlos Galup-Montoro,Manuel J. Barragan,Jean-Michel Fournier,Andreia Cathelin,Sylvain Bourdel +7 more
TL;DR: A design-oriented MOS transistor model that uses only 7 parameters for analytically describing the MOSFET behavior is presented in this article , based on the inversion charge, which accounts for the most relevant short-channel effects in advanced technologies.
Proceedings ArticleDOI
A Diode-Based D-2D DAC Architecture with Leakage Current Compensation for Ultra-low Power Application
Jesse Coulon,Jian Liu +1 more
TL;DR: In this paper , a back-to-back diode configuration is proposed to reduce the effect of tunnelling leakage in the DAC switches and unit diode and in DAC switches.
Proceedings Article
MOSVIEW: A Graphical Tool for MOS Analog Design This paper presents MOSVIEW, a graphical tool for
TL;DR: MOSVIEW is presented, a graphical tool for transistor-level design of analog MOS circuits that allows students to visualize and explore the design space in order to size and bias the transistor for a given set of specifications.
Journal ArticleDOI
Comments on "Inversion charge modeling"
TL;DR: Gummel and Singhal as discussed by the authors presented an implicit relationship for the inversion charge density in the channel of MOS transistors, which can be used to deduce a compact MOS transistor model.
References
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Book
Operation and modeling of the MOS transistor
TL;DR: In this article, the MOS transistors with ION-IMPLANTED CHANNELS were used for CIRCUIT SIMULATION in a two-and three-tier MOS structure.
Journal ArticleDOI
An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications
TL;DR: In this article, a fully analytical MOS transistor model dedicated to the design and analysis of low-voltage, low-current analog circuits is presented, which exploits the inherent symmetry of the device by referring all the voltages to the local substrate.
Journal ArticleDOI
A g/sub m//I/sub D/ based methodology for the design of CMOS analog circuits and its application to the synthesis of a silicon-on-insulator micropower OTA
TL;DR: In this paper, a new design methodology based on a unified treatment of all the regions of operation of the MOS transistor is proposed for the design of CMOS analog circuits and especially suited for low power circuits where the moderate inversion region often is used.
Journal ArticleDOI
A charge-sheet model of the MOSFET
TL;DR: In this paper, the authors compared the Pao-Sah double-integral model with the charge sheet model for long-channel MOSFETs and found that the charge-sheet model is simpler to extend to two or three dimensions.