Journal ArticleDOI
An MOS transistor model for analog circuit design
TLDR
A physically based model for the metal-oxide-semiconductor (MOS) transistor suitable for analysis and design of analog integrated circuits is presented.Abstract:
This paper presents a physically based model for the metal-oxide-semiconductor (MOS) transistor suitable for analysis and design of analog integrated circuits. Static and dynamic characteristics of the MOS field-effect transistor are accurately described by single-piece functions of two saturation currents in all regions of operation. Simple expressions for the transconductance-to-current ratio, the drain-to-source saturation voltage, and the cutoff frequency in terms of the inversion level are given. The design of a common-source amplifier illustrates the application of the proposed model.read more
Citations
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Journal ArticleDOI
Analysis of the floating-gate transistor using the charge sheet model
A. S. Medina-Vazquez,M. E. Meda-Campaña,M. A. Gurrola-Navarro,Edwin C. Becerra-Alvarez,Edgar López-Delgadillo +4 more
TL;DR: In this article, the problem of obtaining the drain to source current numerically as a function of external voltages is addressed, and a small signal analysis of the device is included.
Proceedings ArticleDOI
Novel design methodology for short-channel MOSFET analog circuits
R.L.O. Pinto,Franco Maloberti +1 more
TL;DR: A methodology that addresses short-channel effects to design MOSFET circuits based on a combination of parameter extraction and simple analytical models that allows precise results is presented.
Ultra-low power circuits for power management
TL;DR: In this paper, the authors proposed a power management algorithm for a completely autonomous biosensor node in an energy harvesting device, which requires a customized power manage power control system. But, the implementation of completely autonomous nodes is difficult and time consuming.
Proceedings ArticleDOI
Analysis of non-idealities in parallel-summation logarithmic amplifiers
TL;DR: Non-ideal factors in the used components play a key role in the performance of high-accuracy logarithmic amplifiers for sensing applications, and it is shown that the use of simplified mathematical models may lead to wrong conclusions.
Proceedings ArticleDOI
X ray and blue print: tools for MOSFET analog circuit design addressing short-channel effects
R.L.O. Pinto,Franco Maloberti +1 more
TL;DR: An automatic engine built in the Java language designs transistors in few and easy steps using a combination of parameter extraction and simple analytical models that address the short-channel effects by referring them to the early voltage.
References
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Book
Operation and modeling of the MOS transistor
TL;DR: In this article, the MOS transistors with ION-IMPLANTED CHANNELS were used for CIRCUIT SIMULATION in a two-and three-tier MOS structure.
Journal ArticleDOI
An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications
TL;DR: In this article, a fully analytical MOS transistor model dedicated to the design and analysis of low-voltage, low-current analog circuits is presented, which exploits the inherent symmetry of the device by referring all the voltages to the local substrate.
Journal ArticleDOI
A g/sub m//I/sub D/ based methodology for the design of CMOS analog circuits and its application to the synthesis of a silicon-on-insulator micropower OTA
TL;DR: In this paper, a new design methodology based on a unified treatment of all the regions of operation of the MOS transistor is proposed for the design of CMOS analog circuits and especially suited for low power circuits where the moderate inversion region often is used.
Journal ArticleDOI
A charge-sheet model of the MOSFET
TL;DR: In this paper, the authors compared the Pao-Sah double-integral model with the charge sheet model for long-channel MOSFETs and found that the charge-sheet model is simpler to extend to two or three dimensions.