Journal ArticleDOI
A g/sub m//I/sub D/ based methodology for the design of CMOS analog circuits and its application to the synthesis of a silicon-on-insulator micropower OTA
TLDR
In this paper, a new design methodology based on a unified treatment of all the regions of operation of the MOS transistor is proposed for the design of CMOS analog circuits and especially suited for low power circuits where the moderate inversion region often is used.Abstract:
A new design methodology based on a unified treatment of all the regions of operation of the MOS transistor is proposed. It is intended for the design of CMOS analog circuits and especially suited for low power circuits where the moderate inversion region often is used because it provides a good compromise between speed and power consumption. The synthesis procedure is based on the relation between the ratio of the transconductance over DC drain current g/sub m//I/sub D/ and the normalized current I/sub D//(W/L). The g/sub m//I/sub D/ indeed is a universal characteristic of all the transistors belonging to a same process. It may be derived from experimental measurements and fitted with simple analytical models. The method was applied successfully to the design of a silicon-on-insulator (SOI) micropower operational transconductance amplifier (OTA).read more
Citations
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Journal ArticleDOI
An MOS transistor model for analog circuit design
TL;DR: A physically based model for the metal-oxide-semiconductor (MOS) transistor suitable for analysis and design of analog integrated circuits is presented.
Book
Tradeoffs and Optimization in Analog CMOS Design
TL;DR: In this paper, the authors present hand expressions motivated by the EKV MOS model and measured data for MOS device performance, including velocity saturation and other small-geometry effects.
Journal ArticleDOI
Junctionless Multiple-Gate Transistors for Analog Applications
Rodrigo T. Doria,Marcelo Antonio Pavanello,Renan Trevisoli,M.M. De Souza,Chi-Woo Lee,Isabelle Ferain,Nima Dehdashti Akhavan,Ran Yan,Pedram Razavi,Ran Yu,Abhinav Kranti,Jean-Pierre Colinge +11 more
TL;DR: In this article, the analog properties of nMOS junctionless (JL) multigate transistors are compared with those exhibited by inversion-mode (IM) trigate devices of similar dimensions.
Journal ArticleDOI
Influence of device engineering on the analog and RF performances of SOI MOSFETs
Valeriya Kilchytska,Amaury Nève,Laurent Vancaillie,David Levacq,Stéphane Adriaensen,H. van Meer,K. De Meyer,C. Raynaud,Morin Dehan,Jean-Pierre Raskin,Denis Flandre +10 more
TL;DR: In this paper, the influence of various process options on the analog and RF properties of fully depleted (FD) silicon-on-insulator (SOI), partially depleted (PD) SOI, and bulk MOSFET's with gate lengths down to 0.08 /spl mu/m.
Journal ArticleDOI
A Design Oriented Charge-based Current Model for Symmetric DG MOSFET and its Correlation with the EKV Formalism
Jean-Michel Sallese,Francois Krummenacher,Fabien Prégaldiny,Christophe Lallement,A. S. Roy,Christian Enz +5 more
TL;DR: In this article, a charge-based model for undoped DG MOSFETs under symmetrical operation is proposed, which aims at giving a comprehensive understanding of the device from the design strategy.
References
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Book
CMOS Analog Circuit Design
TL;DR: In this article, the authors present a simple MOS LARGE-SIGNAL MODEL (SPICE Level 1) and a small-signal model for the MOS TRANSISTOR.
Journal ArticleDOI
CMOS analog integrated circuits based on weak inversion operations
Eric A. Vittoz,J. Fellrath +1 more
TL;DR: In this paper, a simple model describing the DC behavior of MOS transistors operating in weak inversion is derived on the basis of previous publications and verified experimentally for both p-and n-channel test transistors of a Si-gate low-voltage CMOS technology.
Book
Design of analog integrated circuits and systems
Kenneth R. Laker,Willy Sansen +1 more
TL;DR: MOS transistor models bipolar transistor models feedback and sensitivity in analogue integrated circuits elementary transistor stages behavioural modelling of operational and transconductance amplifiers operational amplifier design fundamentals of continuous-time and sampled-data active filters design and implementation of integrated active filters.
Journal ArticleDOI
MOS operational amplifier design-a tutorial overview
Paul R. Gray,Robert G. Meyer +1 more
TL;DR: In this paper, an overview of current design techniques for operational amplifiers implemented in CMOS and NMOS technology at a tutorial level is presented, focusing on CMOS amplifiers because of their more widespread use.