Journal ArticleDOI
An MOS transistor model for analog circuit design
TLDR
A physically based model for the metal-oxide-semiconductor (MOS) transistor suitable for analysis and design of analog integrated circuits is presented.Abstract:
This paper presents a physically based model for the metal-oxide-semiconductor (MOS) transistor suitable for analysis and design of analog integrated circuits. Static and dynamic characteristics of the MOS field-effect transistor are accurately described by single-piece functions of two saturation currents in all regions of operation. Simple expressions for the transconductance-to-current ratio, the drain-to-source saturation voltage, and the cutoff frequency in terms of the inversion level are given. The design of a common-source amplifier illustrates the application of the proposed model.read more
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Proceedings ArticleDOI
Improving a MOSFET model for design by hand
Ademir de Jesus Costa,Bruno Jambeiro Alves,Shirlene de Santana Soares,Edson Pinto Santana,Ana Isabela Araujo Cunha +4 more
TL;DR: This work's methodology for the extraction of threshold voltage and specific current of a compact MOSFET model is extended in order to incorporate second order effects such as mobility degradation and threshold voltage dependence on channel length.
Journal ArticleDOI
Cmos current-mode integrator anddifferentiator for low voltage and low power applications
TL;DR: In this paper, a new approach for CMOS current-mode Integrator (CMI) and Differentiator (CMD) realization is presented, where the proposed circuits are employed the inverter-based second-generation current conveyor (CCII).
Proceedings ArticleDOI
Study and Analysis of Noise in CMOS Circuit Design using C5 model process technology
Ayoush Johari,Soni Changlani +1 more
TL;DR: This paper analyzes how input referred noise sources are summed up to a CMOS design model to calculate output noise and concludes that thermal noise or noise due to thermal agitations with flicker noise are the primary noise sources in scalable MOSFET circuit designs.
Proceedings ArticleDOI
Performance and Variability Trade-offs of CMOS PTAT Generator Topologies for Voltage Reference Applications
TL;DR: Monte-Carlo simulations demonstrated the sensitivity of each topology to fabrication variability, showing that the self-cascode MOSFET structure presents the best accuracy of TC, nominal PTAT voltage, and linearity with temperature.
Proceedings Article
Parameter variation and sensitivity analysis of a two-stage Miller amplifier
TL;DR: In this article, a sensitivity analysis of parameter variation for a typical CMOS two-stage Miller operational transconductance amplifier is presented, with the main points of sensitivity related to changes in nominal values of VTO, TOX and geometric parameters.
References
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Book
Operation and modeling of the MOS transistor
TL;DR: In this article, the MOS transistors with ION-IMPLANTED CHANNELS were used for CIRCUIT SIMULATION in a two-and three-tier MOS structure.
Journal ArticleDOI
An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications
TL;DR: In this article, a fully analytical MOS transistor model dedicated to the design and analysis of low-voltage, low-current analog circuits is presented, which exploits the inherent symmetry of the device by referring all the voltages to the local substrate.
Journal ArticleDOI
A g/sub m//I/sub D/ based methodology for the design of CMOS analog circuits and its application to the synthesis of a silicon-on-insulator micropower OTA
TL;DR: In this paper, a new design methodology based on a unified treatment of all the regions of operation of the MOS transistor is proposed for the design of CMOS analog circuits and especially suited for low power circuits where the moderate inversion region often is used.
Journal ArticleDOI
A charge-sheet model of the MOSFET
TL;DR: In this paper, the authors compared the Pao-Sah double-integral model with the charge sheet model for long-channel MOSFETs and found that the charge-sheet model is simpler to extend to two or three dimensions.