Journal ArticleDOI
An MOS transistor model for analog circuit design
TLDR
A physically based model for the metal-oxide-semiconductor (MOS) transistor suitable for analysis and design of analog integrated circuits is presented.Abstract:
This paper presents a physically based model for the metal-oxide-semiconductor (MOS) transistor suitable for analysis and design of analog integrated circuits. Static and dynamic characteristics of the MOS field-effect transistor are accurately described by single-piece functions of two saturation currents in all regions of operation. Simple expressions for the transconductance-to-current ratio, the drain-to-source saturation voltage, and the cutoff frequency in terms of the inversion level are given. The design of a common-source amplifier illustrates the application of the proposed model.read more
Citations
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Proceedings ArticleDOI
1/f Noise and DC Characterization of Partially Depleted SOI N-and P-MOSFETs from 20 º C-250 º C
Milton Nance Ericson,M. Hasanuzzaman,S.C. Terry,C.L. Britton,B. Ohme,S.S. Frank,J.A. Richmond,Benjamin J. Blalock +7 more
TL;DR: In this article, a summary of measured small-signal parameters and low frequency noise characterized over temperature is presented for N- and P- MOSFETs fabricated in a partially depleted SOI 0.8 mum process.
Proceedings ArticleDOI
Low-Voltage Class AB Operational Amplifier
TL;DR: The operational amplifier presented here offers a competitive design choice for low-power low-voltage circuits, which uses a minimum selector circuit to control the class AB operation of the output stage.
Proceedings ArticleDOI
Sub-1 V Supply Nano-Watt MOSFET-Only Threshold Voltage Extractor Circuit
TL;DR: This work presents a self-biased MOSFET threshold voltage VT0 extractor circuit based on a current-voltage relationship derived from a continuous physical model that is valid for any operating condition, from weak to strong inversion, and under triode or saturation regimes.
Dissertation
Study, optimization and silicon implementation of a smart high-voltage conditioning circuit for electrostatic vibration energy harvesting system
TL;DR: This thesis addresses the theoretical analysis of the conditioning circuit of an auto-synchronous conditioning circuit, which combines the diode-based charge pump and the inductive flyback energy return driven by the switch, and developed an algorithm that by proper switching of the flyback allows the optimal energy conversion strategy taking into account the losses associated with the switching.
Proceedings ArticleDOI
Evaluation of the BSIM6 compact MOSFET model's scalability in 40nm CMOS technology
Maria-Anna Chalkiadaki,Anurag Mangla,Christian Enz,Yogesh Singh Chauhan,M. A. Karim,Sriramkumar Venugopalan,Ali M. Niknejad,Chenming Hu +7 more
TL;DR: As a first benchmarking of BSIM6, the model is evaluated for its scaling capabilities when a single set of parameters is used, and the results attest the model's scalability under all bias conditions, proving its reliability for nowadays complex IC designs.
References
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Book
Operation and modeling of the MOS transistor
TL;DR: In this article, the MOS transistors with ION-IMPLANTED CHANNELS were used for CIRCUIT SIMULATION in a two-and three-tier MOS structure.
Journal ArticleDOI
An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications
TL;DR: In this article, a fully analytical MOS transistor model dedicated to the design and analysis of low-voltage, low-current analog circuits is presented, which exploits the inherent symmetry of the device by referring all the voltages to the local substrate.
Journal ArticleDOI
A g/sub m//I/sub D/ based methodology for the design of CMOS analog circuits and its application to the synthesis of a silicon-on-insulator micropower OTA
TL;DR: In this paper, a new design methodology based on a unified treatment of all the regions of operation of the MOS transistor is proposed for the design of CMOS analog circuits and especially suited for low power circuits where the moderate inversion region often is used.
Journal ArticleDOI
A charge-sheet model of the MOSFET
TL;DR: In this paper, the authors compared the Pao-Sah double-integral model with the charge sheet model for long-channel MOSFETs and found that the charge-sheet model is simpler to extend to two or three dimensions.