Journal ArticleDOI
Elimination of GeO2 and Ge3N4 interfacial transition regions and defects at n-type Ge interfaces: A pathway for formation of n-MOS devices on Ge substrates
TLDR
In this article, the authors identify the source of significant electron trapping at interfaces between n-Ge or inverted p-Ge, and Ge oxide, nitride and oxynitride ITRs.About:
This article is published in Applied Surface Science.The article was published on 2008-09-30. It has received 24 citations till now. The article focuses on the topics: Equivalent oxide thickness & Band offset.read more
Citations
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Journal ArticleDOI
High-Mobility Ge N-MOSFETs and Mobility Degradation Mechanisms
Duygu Kuzum,Tejas Krishnamohan,Aneesh Nainani,Yun Sun,Piero Pianetta,H.-S. Philip Wong,Krishna C. Saraswat +6 more
TL;DR: In this article, the authors investigated the mechanisms responsible for poor Ge NMOS performance in the past with detailed gate dielectric stack characterizations and Hall mobility analysis, and they identified the major mechanisms behind poor GeNMOS performance have not been completely understood yet.
Journal ArticleDOI
Radical oxidation of germanium for interface gate dielectric GeO2 formation in metal-insulator-semiconductor gate stack
Masaharu Kobayashi,Gaurav Thareja,Masato Ishibashi,Yun Sun,Peter Griffin,James P. McVittie,Piero Pianetta,Krishna C. Saraswat,Yoshio Nishi +8 more
TL;DR: In this paper, a slot-plane-antenna (SPA) high density radical oxidation was used to grow a metal-oxide-semiconductor (Al2O3) gate stack with a GeO2 interfacial layer.
Proceedings ArticleDOI
Experimental demonstration of high mobility Ge NMOS
Duygu Kuzum,Tejas Krishnamohan,Aneesh Nainani,Yun Sun,Piero Pianetta,H-S Philip Wong,Krishna C. Saraswat +6 more
TL;DR: In this paper, a gate stack engineered with ozone-oxidation is integrated with low temperature S/D activation to fabricate Ge NMOS and the highest electron mobility is demonstrated experimentally, ∼ 1.5 times the universal Si mobility.
Journal ArticleDOI
Atomic structure, electronic structure, and band offsets at Ge:GeO:GeO2 interfaces
L. Lin,K. Xiong,John Robertson +2 more
TL;DR: In this paper, the band gaps of GeO2 and GeO are calculated using hybrid density functionals that do not require band gap corrections, and the atomic structure of solid GeO is found to have threefold coordinated Ge and O sites with planar oxygen sites.
Journal ArticleDOI
Uniaxial Stress Engineering for High-Performance Ge NMOSFETs
Masaharu Kobayashi,Toshifumi Irisawa,Blanka Magyari-Köpe,Krishna C. Saraswat,H.-S. Philip Wong,Yoshio Nishi +5 more
TL;DR: In this article, the uniaxial stress effect on Ge NMOSFETs was experimentally and theoretically investigated, and the physical mechanism of mobility enhancement under such strain indicates that the device performance of GeNMOSFets in the ballistic transport regime can achieve as much as 48% drive current gain beyond the 15 nm technology node.
References
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Journal ArticleDOI
Nanoscale germanium MOS Dielectrics-part I: germanium oxynitrides
TL;DR: In this article, a nanoscale germanium (Ge) oxynitride dielectrics are investigated for Ge MOS device applications, and the synthesizing methodology and physical properties of these OxNitride films have been examined first.
Journal ArticleDOI
Gate dielectric formation and MIS interface characterization on Ge
Shinichi Takagi,Tatsuro Maeda,Noriyuki Taoka,M. Nishizawa,Yukinori Morita,K. Ikeda,Y. Yamashita,M. Nishikawa,Hiroshi Kumagai,Ryosho Nakane,Satoshi Sugahara,N. Sugiyama +11 more
TL;DR: In this article, the physical and electrical properties of Ge MIS interfaces fabricated by direct oxidation and nitridation of Ge surfaces are reviewed and compared on gate stacks composing of HfO"2 and the nitrided Ge surfaces.
Journal ArticleDOI
Nanoscale germanium MOS Dielectrics-part II: high-/spl kappa/ gate dielectrics
TL;DR: In this paper, atomic layer deposition (ALD) and ultraviolet ozone oxidation (UVO) of zirconium and hafnium oxides are investigated for high-kappa dielectric preparation in Ge MOS devices from the perspectives of thermodynamic stability and electrical characteristics.
Journal ArticleDOI
Ultraviolet and infrared absorption of fused Germania
Alvin J. Cohen,Herbert L. Smith +1 more
TL;DR: In this paper, the energy gap for fused germania is shown to be slightly higher than a value published for hexagonal germanium dioxide, which indicates the latter is probably in error.
Journal ArticleDOI
Optical properties of GeO2 in the ultraviolet region
TL;DR: The optical constants of amorphous and crystalline GeO2 were determined by measurements of reflectivity in the region of phonon energy 0·5−25 eV and subsequent use of Kramers-Kronig analysis as discussed by the authors.
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