Journal ArticleDOI
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
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In this paper, the origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally.Abstract:
The origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally. Based on an analysis of the electrostatics, surface states are identified as an important source of electrons. The role of the polarization-induced dipole is also clarified. Experimental Hall data for nominally undoped Al0.34Ga0.66N/GaN structures indicate that ∼1.65 eV surface donors are the actual source of the electrons in the 2DEG, which forms only when the barrier thickness exceeds 35 A.read more
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Dissertation
Analytical modeling of channel potential and threshold voltage of triple material gate AlgaN/Gan hemt and study of its self-heating effect
TL;DR: In this article, the authors propose a novel approach to solve the problem of homonymity in homonymization, i.e., homonymonymity-based homonymisation.
Journal ArticleDOI
Airy Function-Based Model for 2-DEG Charge and Surface Potential in N-Polar Gallium Nitride Heterostructures
M. Anuja Menokey,Arvind Ajoy +1 more
TL;DR: In this article , an analytical method to obtain the charge density and surface potential in an N-polar GaN/AlGaN heterostructure is presented, which accounts for the greater leakage of the wave functions into the spacer and barrier layers.
Dissertation
Enhancement/depletion -mode HEMT technology for III-nitride mixed-signal and RF applications
Journal ArticleDOI
The Sensing Mechanism of InAlN/GaN HEMT
TL;DR: In this paper , the influence of additional surface charge on device performance and the dependence of surface sensing properties on InAlN barrier thickness were investigated systematically by numerical simulation and theoretical analysis, and the results indicated that the saturation output drain current Idsat and two-dimensional electron gas (2DEG) concentration increase with the increase of positive surface charge density, which decrease with an increase of negative surface charge.
GaN heterojunction FET device Fabrication, Characterization and Modeling
TL;DR: In this article, the authors propose a novel approach to solve the problem of homonymity in homonym identification, i.e., homonymonymity-based homonymization.
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Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
Journal ArticleDOI
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Oliver Ambacher,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,William J. Schaff,L.F. Eastman,Roman Dimitrov,L. Wittmer,Martin Stutzmann,W. Rieger,J. Hilsenbeck +12 more
TL;DR: In this article, the authors investigated the role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces.
Journal ArticleDOI
Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
Tetsuya Takeuchi,Shigetoshi Sota,Maki Katsuragawa,Miho Komori,Hideo Takeuchi,Hiroshi Amano,Isamu Akasaki +6 more
TL;DR: In this article, the influence of piezoelectric fields on luminescence properties of GaInN strained quantum wells was studied and it was shown that an electric field of 1.08 MV/cm is induced by the piezolectric effect in strained Ga0.87In0.13N grown on GaN.
Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TL;DR: In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.
Journal ArticleDOI
Very high breakdown voltage and large transconductance realized on gan heterojunction field effect transistors
Yifeng Wu,Bernd Keller,Stacia Keller,D. Kapolnek,Peter Kozodoy,Steven P. DenBaars,Umesh K. Mishra +6 more
TL;DR: In this article, the authors reported record high breakdown voltages up to 340 and 230 V realized on unintentionally doped (1.5 μm gate length) and Si doped(1 μm/GaN modulation doped field effect transistors (MODFETs), respectively.