Journal ArticleDOI
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
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In this paper, the origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally.Abstract:
The origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally. Based on an analysis of the electrostatics, surface states are identified as an important source of electrons. The role of the polarization-induced dipole is also clarified. Experimental Hall data for nominally undoped Al0.34Ga0.66N/GaN structures indicate that ∼1.65 eV surface donors are the actual source of the electrons in the 2DEG, which forms only when the barrier thickness exceeds 35 A.read more
Citations
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Journal ArticleDOI
Electrical and structural characteristics of sputtered c-oriented AlN thin films on Si (100) and Si (110) substrates
Akhilesh Pandey,Akhilesh Pandey,Janesh K Kaushik,Shankar Dutta,Ashok K. Kapoor,Davinder Kaur +5 more
TL;DR: In this article, the morphological and electrical properties of c-axis oriented aluminium nitride (AlN) thin films grown on Si (100) and Si (110) substrates by direct current (DC) reactive sputtering technique were discussed.
Proceedings ArticleDOI
AlGaN/AlN/GaN High Electron Mobility Transistors with Improved Carrier Transport
Giacinta Parish,Gilberto A. Umana-Membreno,S.M. Jolley,D. Buttari,Sarah L. Keller,Brett Nener,Umesh Mishra +6 more
TL;DR: In this article, the role of alloy and interface roughness scattering on 2DEG properties of AlGaN/GaN HEMTs with and without an interlayer was investigated.
Journal ArticleDOI
Drain current collapse in GaN metal-semiconductor field-effect transistors due to surface band-bending effects
TL;DR: In this article, the role played by the parasitic access regions in their circuit properties becomes dominant due to surface band-bending effects present in wide bandgap semiconductors such as GaAs or GaN, two parasitic FETs having ungated surfaces as floating gates appear in series with the targeted one.
Dissertation
Nouvelles méthodes de caractérisation et de modélisation non-linéaire électrothermique des effets de piège dans la technologie HEMT GaN pour l’étude de la stabilité pulse à pulse dans les applications radar
TL;DR: In this paper, the authors present an analysis of the mesure of stabilite pulse a pulse of a radar in the case of rafale radar d'impulsions irregulieres.
Journal ArticleDOI
Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries
S. Martin-Horcajo,Ashu Wang,A. Boscá,M. F. Romero,Marko J. Tadjer,Marko J. Tadjer,Andrew D. Koehler,Travis J. Anderson,Fernando Calle +8 more
TL;DR: In this paper, the location of traps in the gate-drain access region was investigated by means of pulsed measurements under different quiescent biases for GaN/AlGaN/GaN and InAlN barrier devices.
References
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Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
Journal ArticleDOI
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Oliver Ambacher,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,William J. Schaff,L.F. Eastman,Roman Dimitrov,L. Wittmer,Martin Stutzmann,W. Rieger,J. Hilsenbeck +12 more
TL;DR: In this article, the authors investigated the role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces.
Journal ArticleDOI
Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
Tetsuya Takeuchi,Shigetoshi Sota,Maki Katsuragawa,Miho Komori,Hideo Takeuchi,Hiroshi Amano,Isamu Akasaki +6 more
TL;DR: In this article, the influence of piezoelectric fields on luminescence properties of GaInN strained quantum wells was studied and it was shown that an electric field of 1.08 MV/cm is induced by the piezolectric effect in strained Ga0.87In0.13N grown on GaN.
Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TL;DR: In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.
Journal ArticleDOI
Very high breakdown voltage and large transconductance realized on gan heterojunction field effect transistors
Yifeng Wu,Bernd Keller,Stacia Keller,D. Kapolnek,Peter Kozodoy,Steven P. DenBaars,Umesh K. Mishra +6 more
TL;DR: In this article, the authors reported record high breakdown voltages up to 340 and 230 V realized on unintentionally doped (1.5 μm gate length) and Si doped(1 μm/GaN modulation doped field effect transistors (MODFETs), respectively.