Journal ArticleDOI
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
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In this paper, the origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally.Abstract:
The origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally. Based on an analysis of the electrostatics, surface states are identified as an important source of electrons. The role of the polarization-induced dipole is also clarified. Experimental Hall data for nominally undoped Al0.34Ga0.66N/GaN structures indicate that ∼1.65 eV surface donors are the actual source of the electrons in the 2DEG, which forms only when the barrier thickness exceeds 35 A.read more
Citations
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Journal ArticleDOI
Effects of Dielectric Passivation on Device Performance of AlGaN/GaN High-Electron-Mobility Transistors
Journal ArticleDOI
Drain Schottky contact influence on low-field transport characteristic of AlGaN/GaN heterostructure field-effect transistors
Ming Yang,Qizheng Ji,Yuanyuan Wang,Xiao-Mei Hu,Qingyun Yuan,Xiaoning Liu,Jihao He,Ruojue Wang,Li Zhou,J.W. Xiao,Fei Mei,Xiao Liu,Zhengyu Wang,Chao Zhang,Jiapeng Wu,Yujing Wu,Ying-Kun Liu,Zhengang Cui +17 more
Journal ArticleDOI
Performance Enhancement of Normally-Off Plasma-Assisted Atomic Layer Deposited Al2O3/GaN Metal–Oxide–Semiconductor Field-Effect Transistor with Postdeposition Annealing
TL;DR: In this paper, a GaN-based metal-oxide-semiconductor field effect transistor (MOSFET) was fabricated using the Al0.3Ga0.7N/GaN heterostructure with a 2DEG density of ~1×1014 cm-2 grown on a silicon substrate.
Journal ArticleDOI
Effect of Moisture on the Frequency-Dependent Current of an AlGaN/GaN High-Electron-Mobility Transistor
TL;DR: The effect of moisture on the current of an AlGaN/GaN high-electron-mobility transistor was investigated in this paper, where the binding of polarized H2O to negatively charged traps was proposed as the reason for the current degradation.
Proceedings Article
Analysis on the CTLM and LTLM Applicability for GaN HEMTs Structure Alloyed Ohmic Contact Resistance Evaluation
TL;DR: In this article, the authors demonstrated that the Marlow's CTLM is unsuitable for GaN HEMTs structure alloyed ohmic contact resistance evaluation, because of the strong piezoelectric induced polarization property of the hexagonal III-nitride heterojunction device structure.
References
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Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
Journal ArticleDOI
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Oliver Ambacher,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,William J. Schaff,L.F. Eastman,Roman Dimitrov,L. Wittmer,Martin Stutzmann,W. Rieger,J. Hilsenbeck +12 more
TL;DR: In this article, the authors investigated the role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces.
Journal ArticleDOI
Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
Tetsuya Takeuchi,Shigetoshi Sota,Maki Katsuragawa,Miho Komori,Hideo Takeuchi,Hiroshi Amano,Isamu Akasaki +6 more
TL;DR: In this article, the influence of piezoelectric fields on luminescence properties of GaInN strained quantum wells was studied and it was shown that an electric field of 1.08 MV/cm is induced by the piezolectric effect in strained Ga0.87In0.13N grown on GaN.
Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TL;DR: In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.
Journal ArticleDOI
Very high breakdown voltage and large transconductance realized on gan heterojunction field effect transistors
Yifeng Wu,Bernd Keller,Stacia Keller,D. Kapolnek,Peter Kozodoy,Steven P. DenBaars,Umesh K. Mishra +6 more
TL;DR: In this article, the authors reported record high breakdown voltages up to 340 and 230 V realized on unintentionally doped (1.5 μm gate length) and Si doped(1 μm/GaN modulation doped field effect transistors (MODFETs), respectively.