Journal ArticleDOI
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
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TLDR
In this paper, the origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally.Abstract:
The origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally. Based on an analysis of the electrostatics, surface states are identified as an important source of electrons. The role of the polarization-induced dipole is also clarified. Experimental Hall data for nominally undoped Al0.34Ga0.66N/GaN structures indicate that ∼1.65 eV surface donors are the actual source of the electrons in the 2DEG, which forms only when the barrier thickness exceeds 35 A.read more
Citations
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Journal ArticleDOI
Characterization of Parasitic Resistances of AlN/GaN/AlGaN HEMTs Through TCAD-Based Device Simulations and On-Wafer Measurements
Nandha Kumar Subramani,Amit Kumar Sahoo,Jean-Christophe Nallatamby,Raphaël Sommet,Nathalie Rolland,Farid Medjdoub,Raymond Quéré +6 more
TL;DR: In this article, a detailed characterization and estimation of the temperature-dependent onresistance of GaN HEMTs through dc and low-frequency (LF) S-parameter measurements is presented.
Patent
High Electron Mobility Transistors And Methods Of Fabricating The Same
TL;DR: In this paper, a two-dimensional electron gas (2DEG) channel is induced in a high electron mobility transistor (HEMT) by using a channel forming layer.
Journal ArticleDOI
Effect of surface passivation process for AlGaN/GaN HEMT heterostructures using phenol functionalized-porphyrin based organic molecules
Manjari Garg,Tejas R. Naik,Ravi Pathak,Valipe Ramgopal Rao,Che-Hao Liao,Kuang-Hui Li,Haiding Sun,Xiaohang Li,Rajendra Singh +8 more
TL;DR: In this paper, the authors investigated an unexplored possibility of passivating the charged surface states on AlGaN/GaN high electron mobility transistor (HEMT) heterostructures by using organic molecules.
Proceedings ArticleDOI
Recent advances in GaN HEMT development
Frank Schwierz,Oliver Ambacher +1 more
TL;DR: In this article, the authors provide an overview on the current status of GaN HEMT technology, and discuss the relevant properties of the AlGaN/GaN material system.
Dissertation
Méthodes et analyses physico-expérimentales des mécanismes liés à la résistance dynamique dans les composants HEMT GaN de puissance
TL;DR: In this article, a nouvelle methodologie generale de mesure permettant dobtenir des resultats fiables et reproductibles was proposed, with the importance of maitriser les conditions initiales avant chaque mesure.
References
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Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
Journal ArticleDOI
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Oliver Ambacher,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,William J. Schaff,L.F. Eastman,Roman Dimitrov,L. Wittmer,Martin Stutzmann,W. Rieger,J. Hilsenbeck +12 more
TL;DR: In this article, the authors investigated the role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces.
Journal ArticleDOI
Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
Tetsuya Takeuchi,Shigetoshi Sota,Maki Katsuragawa,Miho Komori,Hideo Takeuchi,Hiroshi Amano,Isamu Akasaki +6 more
TL;DR: In this article, the influence of piezoelectric fields on luminescence properties of GaInN strained quantum wells was studied and it was shown that an electric field of 1.08 MV/cm is induced by the piezolectric effect in strained Ga0.87In0.13N grown on GaN.
Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TL;DR: In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.
Journal ArticleDOI
Very high breakdown voltage and large transconductance realized on gan heterojunction field effect transistors
Yifeng Wu,Bernd Keller,Stacia Keller,D. Kapolnek,Peter Kozodoy,Steven P. DenBaars,Umesh K. Mishra +6 more
TL;DR: In this article, the authors reported record high breakdown voltages up to 340 and 230 V realized on unintentionally doped (1.5 μm gate length) and Si doped(1 μm/GaN modulation doped field effect transistors (MODFETs), respectively.