Journal ArticleDOI
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
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In this paper, the origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally.Abstract:
The origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally. Based on an analysis of the electrostatics, surface states are identified as an important source of electrons. The role of the polarization-induced dipole is also clarified. Experimental Hall data for nominally undoped Al0.34Ga0.66N/GaN structures indicate that ∼1.65 eV surface donors are the actual source of the electrons in the 2DEG, which forms only when the barrier thickness exceeds 35 A.read more
Citations
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Proceedings ArticleDOI
GaN lattice matched ZnO/Pr 2 O 3 film as gate dielectric oxide layer for AlGaN/GaN HEMT
Che-Kai Lin,Ming-Yang Chen,Hsiang-Chun Wang,Chih-Wei Yang,Chao-Wei Chiu,Hsien-Chin Chiu,Kuang-Po Hsueh +6 more
TL;DR: ZnO/Pr 2 O 3 dielectric was used in this article for low leakage current of AlGaN/GaN based MOS-HEMT, which showed superior breakdown voltage performance compared to conventional Ni/Au HEMT.
Journal ArticleDOI
The effect of negative substrate bias on the electrical characteristics of InAlN/GaN MIS-HEMTs
TL;DR: In this article, the effect of negative substrate bias on the device performance of the InAlN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) was studied.
Journal ArticleDOI
Study on the electron mobility related with ohmic contact width in AlGaN/GaN HEMTs
Ming Yang,Qizheng Ji,Xinguang Su,Weihong Zhang,Yuanyuan Wang,Lei Wang,Xiaofeng Hu,Qingyun Yuan,Peiyuan Feng,Yang Liu +9 more
TL;DR: For the fabricated AlGaN/GaN high electron mobility transistors (HEMTs) with different Ohmic contact widths, the gate-channel electron mobility is obtained experimentally.
Proceedings ArticleDOI
Modeling of 2DEG and 2DHG in i-GaN capped AlGaN/AlN/GaN HEMTs
TL;DR: In this article, a 2D drift-diffusion model with Schrodinger-Poisson quantum corrections using ATLAS toolbox by Silvaco is calibrated against experimental 1 μm gate length GaN-based high electron mobility transistor (HEMT).
Journal ArticleDOI
Simulation of temperature and electric field-dependent barrier traps effects in AlGaN/GaN HEMTs
TL;DR: In this article, the authors considered electron trapping and detrapping processes in the AlGaN barrier of high electron mobility transistors as that trapping is the process of electrons directly tunneling from the gate metal into the barrier traps while detrappping is electrons emission from the traps into the conduction band by phonon-assisted tunneling.
References
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Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
Journal ArticleDOI
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Oliver Ambacher,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,William J. Schaff,L.F. Eastman,Roman Dimitrov,L. Wittmer,Martin Stutzmann,W. Rieger,J. Hilsenbeck +12 more
TL;DR: In this article, the authors investigated the role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces.
Journal ArticleDOI
Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
Tetsuya Takeuchi,Shigetoshi Sota,Maki Katsuragawa,Miho Komori,Hideo Takeuchi,Hiroshi Amano,Isamu Akasaki +6 more
TL;DR: In this article, the influence of piezoelectric fields on luminescence properties of GaInN strained quantum wells was studied and it was shown that an electric field of 1.08 MV/cm is induced by the piezolectric effect in strained Ga0.87In0.13N grown on GaN.
Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TL;DR: In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.
Journal ArticleDOI
Very high breakdown voltage and large transconductance realized on gan heterojunction field effect transistors
Yifeng Wu,Bernd Keller,Stacia Keller,D. Kapolnek,Peter Kozodoy,Steven P. DenBaars,Umesh K. Mishra +6 more
TL;DR: In this article, the authors reported record high breakdown voltages up to 340 and 230 V realized on unintentionally doped (1.5 μm gate length) and Si doped(1 μm/GaN modulation doped field effect transistors (MODFETs), respectively.