Journal ArticleDOI
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
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In this paper, the origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally.Abstract:
The origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally. Based on an analysis of the electrostatics, surface states are identified as an important source of electrons. The role of the polarization-induced dipole is also clarified. Experimental Hall data for nominally undoped Al0.34Ga0.66N/GaN structures indicate that ∼1.65 eV surface donors are the actual source of the electrons in the 2DEG, which forms only when the barrier thickness exceeds 35 A.read more
Citations
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Journal ArticleDOI
Enhancement mode GaN MOSFET for high power applications using AlGaN/GaN heterostructure
Sudakar Singh Chauhan,Arun Sunny +1 more
TL;DR: In this paper, an enhancement mode GaN MOSFET based on AlGaN/GaN heterostructure suitable for high power applications is presented, which has less OFF current so that the power leakage from the device is small.
Book ChapterDOI
Al-rich AlGaN semiconductor materials and their device applications
TL;DR: In this paper, the widebandgap materials Al-rich AlGaN materials, and their applications on the deep UV LEDs, photodetectors, and power devices are reviewed.
Journal ArticleDOI
The relationship between AlGaN barrier layer thickness and polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors
TL;DR: In this article, the relationship between AlGaN barrier layer thickness and P C F scattering was determined, and the results have guiding value toward the optimization of alGaN/GaN materials and structures.
Journal ArticleDOI
Improved package reliability of AlGaN/GaN HFETs on 150 mm Si substrates by SiNx/polyimide dual passivation layers
TL;DR: In this article, SiN x /photosensitive polyimide(PSPI) dual layers were proposed as passivation layers for high power, enhanced mode AlGaN/GaN HFETs on 6-in. Si substrates.
Journal ArticleDOI
Graphene-induced positive shift of the flat band voltage in recessed gate AlGaN/GaN structures
TL;DR: In this paper, a layer of graphene is inserted into Al2O3/recessed gate AlGaN/GaN structures to realize the positive shift of flatband voltage VFB.
References
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Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
Journal ArticleDOI
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Oliver Ambacher,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,William J. Schaff,L.F. Eastman,Roman Dimitrov,L. Wittmer,Martin Stutzmann,W. Rieger,J. Hilsenbeck +12 more
TL;DR: In this article, the authors investigated the role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces.
Journal ArticleDOI
Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
Tetsuya Takeuchi,Shigetoshi Sota,Maki Katsuragawa,Miho Komori,Hideo Takeuchi,Hiroshi Amano,Isamu Akasaki +6 more
TL;DR: In this article, the influence of piezoelectric fields on luminescence properties of GaInN strained quantum wells was studied and it was shown that an electric field of 1.08 MV/cm is induced by the piezolectric effect in strained Ga0.87In0.13N grown on GaN.
Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TL;DR: In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.
Journal ArticleDOI
Very high breakdown voltage and large transconductance realized on gan heterojunction field effect transistors
Yifeng Wu,Bernd Keller,Stacia Keller,D. Kapolnek,Peter Kozodoy,Steven P. DenBaars,Umesh K. Mishra +6 more
TL;DR: In this article, the authors reported record high breakdown voltages up to 340 and 230 V realized on unintentionally doped (1.5 μm gate length) and Si doped(1 μm/GaN modulation doped field effect transistors (MODFETs), respectively.