Journal ArticleDOI
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
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In this paper, the origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally.Abstract:
The origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally. Based on an analysis of the electrostatics, surface states are identified as an important source of electrons. The role of the polarization-induced dipole is also clarified. Experimental Hall data for nominally undoped Al0.34Ga0.66N/GaN structures indicate that ∼1.65 eV surface donors are the actual source of the electrons in the 2DEG, which forms only when the barrier thickness exceeds 35 A.read more
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Theory of Modern Electronic Semiconductor Devices
Kevin F. Brennan,April S. Brown +1 more
TL;DR: In this paper, the authors present an overview of the state-of-the-art SEMICONDUCTOR DEVICE TRENDS, including the following: 1.1 Formation of Heterostructures. 2.2 Modulation Doping. 3.3 Base Transport Dynamics. 4.4 Nonstationary Transport Effects and Breakdown.
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AlGaN/GaN biosensor—effect of device processing steps on the surface properties and biocompatibility
I. Cimalla,Florentina Will,Katja Tonisch,M. Niebelschütz,V. Cimalla,Vadim Lebedev,G. Kittler,Marcel Himmerlich,Stefan Krischok,J. A. Schaefer,Michael Gebinoga,Andreas Schober,T. Friedrich,Oliver Ambacher +13 more
TL;DR: In this article, the impact of typical device processing steps (KOH, HCl, HF wet chemical etching, SF 6 and Cl plasma etching) on the surface properties (roughness, chemical composition, contact angle to water) of group III-nitride based chemical sensors is investigated with emphasis on the electrical performance of the sensor and the biocompatibility.
Journal ArticleDOI
Distribution of donor states on etched surface of AlGaN/GaN heterostructures
Masataka Higashiwaki,Srabanti Chowdhury,Mao Sheng Miao,Brian L. Swenson,Chris G. Van de Walle,Umesh K. Mishra +5 more
TL;DR: In this article, the dependence of electron density on AlGaN barrier thickness (dAlGaN) was studied for single heterostructures with low-power reactive ion etching (RIE) instead of growth.
Journal ArticleDOI
Influence of Field Plate on the Transient Operation of the AlGaN/GaN HEMT
TL;DR: In this paper, a link between the AlGaN/GaN high-electron-mobility transistor (HEMT) field plate and the rate of reoccupation of surface traps is presented.
Journal ArticleDOI
Transient characteristics of GaN-based heterostructure field-effect transistors
Erhard Kohn,I. Daumiller,Mike Kunze,Martin Neuburger,M. Seyboth,T.J. Jenkins,J. Sewell,J. Van Norstand,Y. Smorchkova,Umesh K. Mishra +9 more
TL;DR: In this article, the authors compared the thermal and electronic transients of different GaN-based FET structures, and found that the thermal transients are mainly reflected in changes in channel carrier mobility, while the electronic ones are dominated by charge instabilities caused by the polar nature of the material.
References
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Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
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Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Oliver Ambacher,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,William J. Schaff,L.F. Eastman,Roman Dimitrov,L. Wittmer,Martin Stutzmann,W. Rieger,J. Hilsenbeck +12 more
TL;DR: In this article, the authors investigated the role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces.
Journal ArticleDOI
Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
Tetsuya Takeuchi,Shigetoshi Sota,Maki Katsuragawa,Miho Komori,Hideo Takeuchi,Hiroshi Amano,Isamu Akasaki +6 more
TL;DR: In this article, the influence of piezoelectric fields on luminescence properties of GaInN strained quantum wells was studied and it was shown that an electric field of 1.08 MV/cm is induced by the piezolectric effect in strained Ga0.87In0.13N grown on GaN.
Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TL;DR: In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.
Journal ArticleDOI
Very high breakdown voltage and large transconductance realized on gan heterojunction field effect transistors
Yifeng Wu,Bernd Keller,Stacia Keller,D. Kapolnek,Peter Kozodoy,Steven P. DenBaars,Umesh K. Mishra +6 more
TL;DR: In this article, the authors reported record high breakdown voltages up to 340 and 230 V realized on unintentionally doped (1.5 μm gate length) and Si doped(1 μm/GaN modulation doped field effect transistors (MODFETs), respectively.