Journal ArticleDOI
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
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In this paper, the origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally.Abstract:
The origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally. Based on an analysis of the electrostatics, surface states are identified as an important source of electrons. The role of the polarization-induced dipole is also clarified. Experimental Hall data for nominally undoped Al0.34Ga0.66N/GaN structures indicate that ∼1.65 eV surface donors are the actual source of the electrons in the 2DEG, which forms only when the barrier thickness exceeds 35 A.read more
Citations
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Journal ArticleDOI
AlGaN/GaN High-Electron-Mobility Transistor Using a Trench Structure for High-Voltage Switching Applications
TL;DR: In this article, the authors proposed a new AlGaN/GaN high-electron-mobility transistor using a trench structure for high-voltage switching applications, which improved the gate leakage current and breakdown voltage.
Journal ArticleDOI
Study of space charge in gallium nitride by the thermal step method
TL;DR: In this paper, the authors report the electric investigation of thin nitride gallium films by the capacitance voltage technique and the thermal step method (TSM), which reveals MOS behavior and shows strong capacitance hysteresis.
Gallium Nitride Based Heterostructure Interband Tunnel Junctions
TL;DR: In this paper, the authors describe the design, molecular beam epitaxy growth, fabrication and characterization of Gallium Nitride (GaN)-based interband tunnel junctions (TJs) surpassing the state-of-the-art device performance.
Proceedings ArticleDOI
Normally-off Al 0.25 Ga 0.75 N/GaN MOSHEMT with stack gate dielectric structure
R. Swain,Trupti Ranjan Lenka +1 more
TL;DR: In this paper, a Stack Gate Metal Oxide Semiconductor Field Effect Transistor (MOSHEMT) structure with HfO 2 and SiO 2 as gate dielectric is proposed for achieving enhancement mode operation.
Journal ArticleDOI
Steady state and transient behavior of currents in AlGaN∕GaN planar Schottky diodes and mechanism of current collapse
TL;DR: In this paper, the steady state and transient behavior of current in a planar Schottky metal contact formed on a standard AlGaN∕GaN high electron mobility transistor wafer was investigated.
References
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Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
Journal ArticleDOI
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Oliver Ambacher,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,William J. Schaff,L.F. Eastman,Roman Dimitrov,L. Wittmer,Martin Stutzmann,W. Rieger,J. Hilsenbeck +12 more
TL;DR: In this article, the authors investigated the role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces.
Journal ArticleDOI
Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
Tetsuya Takeuchi,Shigetoshi Sota,Maki Katsuragawa,Miho Komori,Hideo Takeuchi,Hiroshi Amano,Isamu Akasaki +6 more
TL;DR: In this article, the influence of piezoelectric fields on luminescence properties of GaInN strained quantum wells was studied and it was shown that an electric field of 1.08 MV/cm is induced by the piezolectric effect in strained Ga0.87In0.13N grown on GaN.
Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TL;DR: In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.
Journal ArticleDOI
Very high breakdown voltage and large transconductance realized on gan heterojunction field effect transistors
Yifeng Wu,Bernd Keller,Stacia Keller,D. Kapolnek,Peter Kozodoy,Steven P. DenBaars,Umesh K. Mishra +6 more
TL;DR: In this article, the authors reported record high breakdown voltages up to 340 and 230 V realized on unintentionally doped (1.5 μm gate length) and Si doped(1 μm/GaN modulation doped field effect transistors (MODFETs), respectively.