Journal ArticleDOI
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
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In this paper, the origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally.Abstract:
The origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally. Based on an analysis of the electrostatics, surface states are identified as an important source of electrons. The role of the polarization-induced dipole is also clarified. Experimental Hall data for nominally undoped Al0.34Ga0.66N/GaN structures indicate that ∼1.65 eV surface donors are the actual source of the electrons in the 2DEG, which forms only when the barrier thickness exceeds 35 A.read more
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Proceedings ArticleDOI
Characterization of dislocations and surface potential in III-V nitride heterostructures
TL;DR: In this article, the characterization of III-V nitrides by Electrostatic Force Microscopy (EFM) and Atomic Force Micro Scopy (AFM) is reported, where the morphology of the surfaces was determined by AFM, while EFM was used to measure the surface barrier potential.
Journal ArticleDOI
Analytical Surface Charge Control Model for AlN/GaN/AlGaN Double Heterojunction Field-Effect Transistor
TL;DR: In this article, a non-linear expression for Fermi level (EF) variation with the two-dimensional electron gas density (2DEG) was proposed, which provides better agreement with the numerical solution than the previous approximations.
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Probing the formation of two-dimensional electron gas in AlInGaN/ GaN heterostructures by photoluminescence spectroscopy
TL;DR: In this article, temperature-dependent photoluminescence (PL) was used to study the optical transitions in AlInGaN quaternary alloys with variable thickness.
GaN Non-Volatile Memory Based on Junction Barrier-Controlled Bipolar Charge Trapping
TL;DR: In this article , a tunnel-oxide-free GaN-based nonvolatile memory (NVM) device is proposed to untangle the trilemma among speed, retention, and endurance in the implementation of conventional NVM.
Journal ArticleDOI
Polarization-Induced Two-Dimensional Electron Gas at BeO/ZnO Interface
TL;DR: In this article , the formation of a polarization-induced two-dimensional electron gas (2DEG) at a BeO/ZnO heterostructure interface was demonstrated, where the polarity discontinuity induced by the c-axis-grown crystalline BeO film caused charges to accumulate on the ZnO substrate.
References
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Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
Journal ArticleDOI
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Oliver Ambacher,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,William J. Schaff,L.F. Eastman,Roman Dimitrov,L. Wittmer,Martin Stutzmann,W. Rieger,J. Hilsenbeck +12 more
TL;DR: In this article, the authors investigated the role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces.
Journal ArticleDOI
Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
Tetsuya Takeuchi,Shigetoshi Sota,Maki Katsuragawa,Miho Komori,Hideo Takeuchi,Hiroshi Amano,Isamu Akasaki +6 more
TL;DR: In this article, the influence of piezoelectric fields on luminescence properties of GaInN strained quantum wells was studied and it was shown that an electric field of 1.08 MV/cm is induced by the piezolectric effect in strained Ga0.87In0.13N grown on GaN.
Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TL;DR: In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.
Journal ArticleDOI
Very high breakdown voltage and large transconductance realized on gan heterojunction field effect transistors
Yifeng Wu,Bernd Keller,Stacia Keller,D. Kapolnek,Peter Kozodoy,Steven P. DenBaars,Umesh K. Mishra +6 more
TL;DR: In this article, the authors reported record high breakdown voltages up to 340 and 230 V realized on unintentionally doped (1.5 μm gate length) and Si doped(1 μm/GaN modulation doped field effect transistors (MODFETs), respectively.