Journal ArticleDOI
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
Reads0
Chats0
TLDR
In this paper, the origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally.Abstract:
The origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally. Based on an analysis of the electrostatics, surface states are identified as an important source of electrons. The role of the polarization-induced dipole is also clarified. Experimental Hall data for nominally undoped Al0.34Ga0.66N/GaN structures indicate that ∼1.65 eV surface donors are the actual source of the electrons in the 2DEG, which forms only when the barrier thickness exceeds 35 A.read more
Citations
More filters
Proceedings ArticleDOI
Breakdown voltage enhancement for power AlGaN/GaN HEMTs with Air-bridge Field Plate
TL;DR: In this article, an AlGaN/GaN high-electron mobility transistor (HEMT) with a novel source-connected Air-bridge Field Plate (AFP) is simulated, optimized and experimentally verified.
Journal ArticleDOI
Evolution of field dependent carrier trapping during off-state degradation for GaN based metal oxide semiconductor high electron mobility transistors
TL;DR: In this article, the off-state degradation in GaN-based metal-oxide-semiconductor high electron mobility transistors has three field dependent regimes and the degradation is dominated by electron trapping near the drain edge at relatively low electric field; hole trapping followed by structural defects tends to dominate at high electric field.
Journal ArticleDOI
Efficient ab initio plus analytic calculation of the effect of GaN layer tensile strain in AlGaN/GaN heterostructures
GaN Heterostructures for Biosensing and Radiation Detection
TL;DR: In this article, the results from an investigation of the interface between gallium nitride wide bandgap semiconductor heterostructures and (bio)molecular systems on their surfaces for biosensing, bioelectronics, and photoelectric applications are presented.
Journal ArticleDOI
Perhydropolysilazane spin-on-dielectric passivation buffer layers for AlGaN/GaN high-electron mobility transistors
TL;DR: In this paper, perhydropolysilazane spin-on-dielectric (SOD) is examined as a SiOx buffer for the plasma-enhanced CVD Si3N4 passivation of AlGaN/GaN high-electron-mobility transistors (HEMTs).
References
More filters
Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
Journal ArticleDOI
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Oliver Ambacher,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,William J. Schaff,L.F. Eastman,Roman Dimitrov,L. Wittmer,Martin Stutzmann,W. Rieger,J. Hilsenbeck +12 more
TL;DR: In this article, the authors investigated the role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces.
Journal ArticleDOI
Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
Tetsuya Takeuchi,Shigetoshi Sota,Maki Katsuragawa,Miho Komori,Hideo Takeuchi,Hiroshi Amano,Isamu Akasaki +6 more
TL;DR: In this article, the influence of piezoelectric fields on luminescence properties of GaInN strained quantum wells was studied and it was shown that an electric field of 1.08 MV/cm is induced by the piezolectric effect in strained Ga0.87In0.13N grown on GaN.
Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TL;DR: In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.
Journal ArticleDOI
Very high breakdown voltage and large transconductance realized on gan heterojunction field effect transistors
Yifeng Wu,Bernd Keller,Stacia Keller,D. Kapolnek,Peter Kozodoy,Steven P. DenBaars,Umesh K. Mishra +6 more
TL;DR: In this article, the authors reported record high breakdown voltages up to 340 and 230 V realized on unintentionally doped (1.5 μm gate length) and Si doped(1 μm/GaN modulation doped field effect transistors (MODFETs), respectively.