Journal ArticleDOI
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
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In this paper, the origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally.Abstract:
The origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally. Based on an analysis of the electrostatics, surface states are identified as an important source of electrons. The role of the polarization-induced dipole is also clarified. Experimental Hall data for nominally undoped Al0.34Ga0.66N/GaN structures indicate that ∼1.65 eV surface donors are the actual source of the electrons in the 2DEG, which forms only when the barrier thickness exceeds 35 A.read more
Citations
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Book ChapterDOI
2D Simulation of Static Interface States in GaN HEMT with AlN/GaN Super-Lattice as Barrier Layer
Imtiaz Alamgir,Aminur Rahman +1 more
TL;DR: In this paper, a simulation of interface charge effects in GaN-based high-electron-mobility transistors (HEMT) with AlN/GaN super-lattice (SL) device is performed.
The Modulation Effect of LPCVD-SixNy Stoichiometry on 2-DEG Characteristic of UTB AlGaN/GaN Heterostructure
TL;DR: In this paper , the impact of low-pressure chemical vapor deposition (LPCVD)-sixNy stoichiometry on 2-D electron gas (2-DEG) transport characteristics of the AlGaN (3.9 nm)/GaN heterostructure and the underlying mechanism of increased 2DEG density are studied.
Journal ArticleDOI
AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO2 as Passivation and Dielectric Layers
Yu-Shyan Lin,Chi-Che Lu +1 more
TL;DR: In this article , improved AlGaN/GaN metal oxide semiconductor high-electron mobility transistors (MOS-HEMTs) were reported to improve the quality of gate oxide by annealing at 300 °C in N2.
Journal ArticleDOI
Heterojunction Channel Engineering in Performance Enhancement of Solution-Processed Oxide Thin-Film Transistors
TL;DR: In this paper , the authors report the solution-based growth of InZnO/AlInZnOs (IZO/AIZO) heterojunction channel layers and their implementation in high-performance TFTs.
Journal ArticleDOI
An intensive study on effects of lateral scaling and gate metals on the RF/DC performance of recessed T-gated Fe-doped AlN/GaN/SiC HEMTs for future RF and microwave power applications
TL;DR: In this article , the effect of gate metals on the electrical performance of recessed T-gated Fe-doped AlN/GaN/SiC HEMT was investigated.
References
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Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
Journal ArticleDOI
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Oliver Ambacher,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,William J. Schaff,L.F. Eastman,Roman Dimitrov,L. Wittmer,Martin Stutzmann,W. Rieger,J. Hilsenbeck +12 more
TL;DR: In this article, the authors investigated the role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces.
Journal ArticleDOI
Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
Tetsuya Takeuchi,Shigetoshi Sota,Maki Katsuragawa,Miho Komori,Hideo Takeuchi,Hiroshi Amano,Isamu Akasaki +6 more
TL;DR: In this article, the influence of piezoelectric fields on luminescence properties of GaInN strained quantum wells was studied and it was shown that an electric field of 1.08 MV/cm is induced by the piezolectric effect in strained Ga0.87In0.13N grown on GaN.
Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TL;DR: In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.
Journal ArticleDOI
Very high breakdown voltage and large transconductance realized on gan heterojunction field effect transistors
Yifeng Wu,Bernd Keller,Stacia Keller,D. Kapolnek,Peter Kozodoy,Steven P. DenBaars,Umesh K. Mishra +6 more
TL;DR: In this article, the authors reported record high breakdown voltages up to 340 and 230 V realized on unintentionally doped (1.5 μm gate length) and Si doped(1 μm/GaN modulation doped field effect transistors (MODFETs), respectively.