Journal ArticleDOI
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
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In this paper, the origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally.Abstract:
The origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally. Based on an analysis of the electrostatics, surface states are identified as an important source of electrons. The role of the polarization-induced dipole is also clarified. Experimental Hall data for nominally undoped Al0.34Ga0.66N/GaN structures indicate that ∼1.65 eV surface donors are the actual source of the electrons in the 2DEG, which forms only when the barrier thickness exceeds 35 A.read more
Citations
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Journal ArticleDOI
Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
TL;DR: In this paper, the influence of threading dislocation density on the sheet resistance of AlGaN/AlN//GaN heterostructures was investigated under Ga-rich conditions by plasma-assisted molecular beam epitaxy.
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Electric Field Distribution Around Drain-Side Gate Edge in AlGaN/GaN HEMTs: Analytical Approach
TL;DR: In this article, an analytical model is proposed for the surface electric field around the drain-side gate edge in the AlGaN/GaN HEMT to which the gate leakage, current collapse, and so on are highly related.
Journal ArticleDOI
Effects of SiN passivation by catalytic chemical vapor deposition on electrical properties of AlGaN∕GaN heterostructure field-effect transistors
TL;DR: In this article, the effects of SiN passivation by catalytic chemical vapor deposition (Cat-CVD) on the electrical properties of AlGaN∕GaN heterostructure field effect transistors were investigated.
Journal ArticleDOI
Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation
TL;DR: In this article, the authors present a pedagogical presentation of the models of electronic states, their effects on device performance, and the presently accepted approaches to minimize their effects such as surface passivation and insulated gate technologies.
Status of Reliability of GaN-Based Heterojunction Field Effect Transistors For high-power, high-frequency transistors used in communications and radar, better predictions of reliability may be obtained by developing new models for failure mechanisms.
Jacob H. Leach,Hadis Morkoç +1 more
TL;DR: GaN-based heterojunction field effect transistors (HFETs) will play major roles in the high-power, high-frequency military and commercial arenas for microwave and millimeter wave transmitters and receivers used in communications and radar devices.
References
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Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
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Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Oliver Ambacher,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,William J. Schaff,L.F. Eastman,Roman Dimitrov,L. Wittmer,Martin Stutzmann,W. Rieger,J. Hilsenbeck +12 more
TL;DR: In this article, the authors investigated the role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces.
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Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
Tetsuya Takeuchi,Shigetoshi Sota,Maki Katsuragawa,Miho Komori,Hideo Takeuchi,Hiroshi Amano,Isamu Akasaki +6 more
TL;DR: In this article, the influence of piezoelectric fields on luminescence properties of GaInN strained quantum wells was studied and it was shown that an electric field of 1.08 MV/cm is induced by the piezolectric effect in strained Ga0.87In0.13N grown on GaN.
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Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TL;DR: In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.
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Very high breakdown voltage and large transconductance realized on gan heterojunction field effect transistors
Yifeng Wu,Bernd Keller,Stacia Keller,D. Kapolnek,Peter Kozodoy,Steven P. DenBaars,Umesh K. Mishra +6 more
TL;DR: In this article, the authors reported record high breakdown voltages up to 340 and 230 V realized on unintentionally doped (1.5 μm gate length) and Si doped(1 μm/GaN modulation doped field effect transistors (MODFETs), respectively.