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Journal ArticleDOI

Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

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TLDR
In this paper, the origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally.
Abstract
The origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally. Based on an analysis of the electrostatics, surface states are identified as an important source of electrons. The role of the polarization-induced dipole is also clarified. Experimental Hall data for nominally undoped Al0.34Ga0.66N/GaN structures indicate that ∼1.65 eV surface donors are the actual source of the electrons in the 2DEG, which forms only when the barrier thickness exceeds 35 A.

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Book ChapterDOI

GaN HEMT Technology

TL;DR: A review of nitride-based HEMT technology, beginning with substrate considerations and moving to crystal growth, device processing, packaging, and finally to products, is presented in this article.
Journal ArticleDOI

Optical properties of group-III nitride quantum wells and quantum boxes

TL;DR: In this article, specific optical properties of quantum-size artificial structures made of group-III nitride semiconductors with natural wurtzite symmetry are discussed. And the influence on recombination dynamics of internal electric fields and carrier localization is discussed in detail.
Journal ArticleDOI

Enhancement of breakdown voltage in AlGaN/GaN HEMT using passivation technique for microwave application

TL;DR: In this paper, the authors compared the performance of SiO2 passivation with SiN passivation and found that the SiO 2 passivation improved the breakdown voltage of AlGaN/GaN HEMT.
Journal ArticleDOI

Current Understanding of Bias-Temperature Instabilities in GaN MIS Transistors for Power Switching Applications

TL;DR: In this paper, bias-temperature instabilities (BTI) in GaN-based high-electron mobility transistors (HEMTs) have been investigated in terms of power, frequency, and efficiency.
Journal ArticleDOI

An AlGaN/GaN HEMT with a reduced surface electric field and an improved breakdown voltage

TL;DR: In this article, a reduced surface electric field in an AlGaN/GaN high electron mobility transistor (HEMT) was investigated by employing a localized Mg-doped layer under the two-dimensional electron gas (2-DEG) channel as an electric field shaping layer.
References
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Journal ArticleDOI

Spontaneous polarization and piezoelectric constants of III-V nitrides

TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
Journal ArticleDOI

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

TL;DR: In this article, the authors investigated the role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces.
Journal ArticleDOI

Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

TL;DR: In this article, the influence of piezoelectric fields on luminescence properties of GaInN strained quantum wells was studied and it was shown that an electric field of 1.08 MV/cm is induced by the piezolectric effect in strained Ga0.87In0.13N grown on GaN.
Journal ArticleDOI

Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy

TL;DR: In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.
Journal ArticleDOI

Very high breakdown voltage and large transconductance realized on gan heterojunction field effect transistors

TL;DR: In this article, the authors reported record high breakdown voltages up to 340 and 230 V realized on unintentionally doped (1.5 μm gate length) and Si doped(1 μm/GaN modulation doped field effect transistors (MODFETs), respectively.
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