Journal ArticleDOI
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
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In this paper, the origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally.Abstract:
The origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally. Based on an analysis of the electrostatics, surface states are identified as an important source of electrons. The role of the polarization-induced dipole is also clarified. Experimental Hall data for nominally undoped Al0.34Ga0.66N/GaN structures indicate that ∼1.65 eV surface donors are the actual source of the electrons in the 2DEG, which forms only when the barrier thickness exceeds 35 A.read more
Citations
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Journal ArticleDOI
Photoreflectance investigations of AlGaN/GaN heterostructures with a two dimensional electron gas
Robert Kudrawiec,Marcin Syperek,Jan Misiewicz,Regina Paszkiewicz,Bogdan Paszkiewicz,Marek Tłaczała +5 more
TL;DR: In this paper, photoreflectance (PR) lines associated with excitonic and band-to-band absorption in both GaN and AlGaN layers have been identified.
Journal ArticleDOI
Influence of polarization on the properties of GaN based FET structures
Martin Neuburger,I. Daumiller,Mike Kunze,M. Seyboth,T. Jenkins,J. E. Van Nostrand,Erhard Kohn +6 more
TL;DR: In this paper, an InGaN-channel FET and a AlGaN/GaN double barrier structure are introduced for the realization of doping screening of the polarization field as main tool.
Book ChapterDOI
High Power High Frequency Transistors: A Material’s Perspective
TL;DR: In this paper, the authors take a closer look at key material parameters that should be considered when predicting performance solely on material properties, including doping, low field mobility, thermal constraints, and heterojunctions.
Journal ArticleDOI
Electrical Spin Injection into the 2D Electron Gas in AlN/GaN Heterostructures with Ultrathin AlN Tunnel Barrier
X H Zhang,Ning Tang,Liuyun Yang,Chi Fang,Caihua Wan,Xingchen Liu,Shixiong Zhang,Y. Zhang,Xinqiang Wang,Yuan Lu,Weikun Ge,Xiufeng Han,Bo Shen +12 more
Journal ArticleDOI
Vertical GaN Power Transistor With Intrinsic Reverse Conduction and Low Gate Charge for High-Performance Power Conversion
Ruopu Zhu,Qi Zhou,Hong Tao,Yi Yang,Kai Hu,Dong Wei,Liyang Zhu,Yuanyuan Shi,Wanjun Chen,Bo Zhang +9 more
TL;DR: In this paper, a novel vertical normally-off GaN power transistor featuring a split gate with the intrinsic reverse conduction (RCVFET) and low gate charge is proposed, favoring the improved switching speed and lower switching power loss.
References
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Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
Journal ArticleDOI
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Oliver Ambacher,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,William J. Schaff,L.F. Eastman,Roman Dimitrov,L. Wittmer,Martin Stutzmann,W. Rieger,J. Hilsenbeck +12 more
TL;DR: In this article, the authors investigated the role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces.
Journal ArticleDOI
Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
Tetsuya Takeuchi,Shigetoshi Sota,Maki Katsuragawa,Miho Komori,Hideo Takeuchi,Hiroshi Amano,Isamu Akasaki +6 more
TL;DR: In this article, the influence of piezoelectric fields on luminescence properties of GaInN strained quantum wells was studied and it was shown that an electric field of 1.08 MV/cm is induced by the piezolectric effect in strained Ga0.87In0.13N grown on GaN.
Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TL;DR: In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.
Journal ArticleDOI
Very high breakdown voltage and large transconductance realized on gan heterojunction field effect transistors
Yifeng Wu,Bernd Keller,Stacia Keller,D. Kapolnek,Peter Kozodoy,Steven P. DenBaars,Umesh K. Mishra +6 more
TL;DR: In this article, the authors reported record high breakdown voltages up to 340 and 230 V realized on unintentionally doped (1.5 μm gate length) and Si doped(1 μm/GaN modulation doped field effect transistors (MODFETs), respectively.