Power GaN Devices

TL;DR: In this paper, the authors highlight the importance of nanoscale thermal transport mechanisms at each layer in material hierarchies that make up modern electronic devices, including those mechanisms that impact thermal transport through: substrates, interfaces and two-dimensional materials, and heat spreading materials.

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Journal ArticleDOI

GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap

Ezgi Dogmus, +2 more

- 05 Feb 2018 -

Applied Physics Express

TL;DR: In this article, the authors report extremely low off-state leakage current in AlGaN/GaN-on-silicon metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) up to a high blocking voltage.

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Book ChapterDOI

TCAD Device Modelling and Simulation of Wide Bandgap Power Semiconductors

Neophytos Lophitis, +3 more

TL;DR: In this paper, the authors deal with TCAD device modelling of wide bandgap power semiconductors, including 3Cand 4H-Silicon Carbide (SiC), Gallium Nitride (GaN), and Diamond devices.

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Journal ArticleDOI

Modeling of Short-Channel Effects in GaN HEMTs

Mojtaba Allaei, +2 more

- 09 Jul 2020 -

IEEE Transactions on Electron Devices

TL;DR: In this article, an explicit and analytic charge-based model for estimating short channel effects (SCEs) in GaN high-electron-mobility transistor (HEMT) devices is proposed.

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