Journal ArticleDOI
Proposal of Ferroelectric Based Electrostatic Doping for Nanoscale Devices
Siying Zheng,Jiuren Zhou,Harshit Agarwal,Jian Tang,Hongrui Zhang,Ning Liu,Yan Liu,Genquan Han,Yue Hao +8 more
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TLDR
In this paper, a ferroelectric based electrostatic doping (Fe-ED) technique is proposed, as the alternative to chemical doping, providing nonvolatile and programmable free electrons and holes for nanoscale devices.Abstract:
A ferroelectric based electrostatic doping (Fe-ED) technique is proposed, as the alternative to chemical doping, providing non-volatile and programmable free electrons and holes for nanoscale devices. We show that Fe-ED achieves non-volatility and reconfigurability via the ferroelectric film inserted into the polarity gate, producing the reconfigurable nanosheet FETs (NSFETs) without the requirement of a constant bias. Thanks to the naturally formed lightly doped drain structures and the extremely high doping concentration over $1\times 10^{21}$ cm−3 in source/drain (S/D) regions, Fe-ED NSFETs exhibit the promising potential benefits for device scaling including the improved subthreshold swing, the suppressed drain-induced barrier lowering, and the ultralow S/D region resistance. Our study suggests a promising doping strategy of Fe-ED for versatile reconfigurable nanoscale transistors and highly integrated circuits.read more
Citations
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Journal ArticleDOI
Reconfigurable Field Effect Transistors: A Technology Enablers Perspective
Thomas Mikolajick,G. Galderisi,S Rai,Maik Simon,Raphael Böckle,Masiar Sistani,Çiğdem Çakırlar,Nilotpal Bhattacharjee,Tom Mauersberger,Andre Heinzig,A. Kumar,Walter M. Weber,Jens Trommer +12 more
TL;DR: In this article , the basic classification of reconfigurable field effect transistors is reviewed and the most important additional features that have been introduced in the last years in order to even further increase the flexibility of the devices are discussed.
Journal ArticleDOI
Time-Dependent Landau-Ginzburg Equation-Based Ferroelectric Tunnel Junction Modeling With Dynamic Response and Multi-Domain Characteristics
TL;DR: In this article , the authors developed a more comprehensive ferroelectric tunnel junction (FTJ) model by combining the Time-Dependent Landau-Ginzburg (TDLG) equations to solve the multi-domain dynamic switching of the Ferroelectric layer and the Non-Equilibrium Green Function (NEGF) to solve tunneling current.
Journal ArticleDOI
Variability Analysis in a 3-D Multigranular Ferroelectric Capacitor
TL;DR: A simulation-based study of the variability of remnant polarization in a multigranular 3-D ultrathin ferroelectric (FE) capacitor is presented in this article, and it is seen that the dielectric grains cause a very large amount of variability in the FE hysteresis loop.
Journal ArticleDOI
Ferroelectric Devices for Intelligent Computing
Genquan Han,Yue Peng,Huan Liu,Jiuren Zhou,Zheng-Yan Luo,Bing Chen,Ran Cheng,Chengji Jin,Wenwu Xiao,Fenning Liu,Jiayi Zhao,Shilong Wang,Xiao Yu,Yang Liu,Yue Hao +14 more
TL;DR: Ferroelectric capacitors, transistors, and tunneling junction devices used for low-power logic, high-performance memory, and neuromorphic applications are comprehensively reviewed and compared.
Journal ArticleDOI
A 6.5 nm thick anti-ferroelectric HfAlO x film for energy storage devices with a high density of 63.7 J cm−3
TL;DR: In this paper, a 6.5-nm-thick anti-ferroelectric HfAlOx film with a high energy storage density of 63.7 J/cm3 was proposed.
References
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Proceedings ArticleDOI
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Proceedings ArticleDOI
A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs
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TL;DR: The FeFET unique properties make it the best candidate for eNVM solutions in sub-2x technologies for low-cost IoT applications.
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