Journal ArticleDOI
Strain effects on three-dimensional, two-dimensional, and one-dimensional silicon logic devices: Predicting the future of strained silicon
TLDR
In this article, the effects of strain-induced band splitting and band warping on the modification of the average conductivity effective mass and carrier scattering rates were evaluated using a classification scheme based on carrier confinement type (electrostatic and spatial) and the degrees of freedom of the mobile carriers.Abstract:
Using a classification scheme based on carrier confinement type (electrostatic and spatial) and the degrees of freedom of the mobile carriers (3DOF, 2DOF, and 1DOF), strain effects on 3DOF to 1DOF silicon logic devices are compared from quantum confinement and device geometry perspectives. For these varied device geometries and types, the effects of strain-induced band splitting and band warping on the modification of the average conductivity effective mass and carrier scattering rates are evaluated. It is shown that the beneficial effects of strain-induced band splitting are the most effective for devices with little or no initial band splitting and become less so for devices with already large built-in band splitting. For these devices with large splitting energy, the potential for strain-induced carrier conductivity mass reduction through repopulation of lower energy bands and the suppression of optical intervalley phonon scattering are limited. On the other hand, for all devices without spatial confin...read more
Citations
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Journal ArticleDOI
Effects of strain on the carrier mobility in silicon nanowires.
TL;DR: The results demonstrate that strain engineering can be used as a very efficient booster for NW technologies and that due care must be given to process-induced strains in NW devices to achieve reproducible performances.
Journal ArticleDOI
Effect of strain on the thermoelectric properties of silicon: an ab?initio study
TL;DR: The anisotropic thermoelectric transport properties of biaxially strained silicon were studied with the focus on a possible enhancement of the power factor to understand the fact that the thermopower decreases if degenerate bands are energetically lifted due to a strain-induced redistribution of states.
Journal ArticleDOI
CMOS Logic Device and Circuit Performance of Si Gate All Around Nanowire MOSFET
Kaushik Nayak,Mohit Bajaj,Aniruddha Konar,Philip J. Oldiges,Kenji Natori,Hiroshi Iwai,Kota V. R. M. Murali,Valipe Ramgopal Rao +7 more
TL;DR: In this article, a detailed 3D numerical analysis is carried out to study and evaluate CMOS logic device and circuit performance of gate-all-around (GAA) Si nanowire (NW) field-effect transistors (FETs) operating in sub-22-nm CMOS technologies.
Journal ArticleDOI
Electron holographic tomography
TL;DR: In this article, the authors review the development and application of automated electron holographic tomography (EHT) to reconstruct 3D potentials in nanostructures such as the mean inner potential of a material or the diffusion potential across p-n junctions in semiconductors.
Journal ArticleDOI
Thermoelectric transport in strained Si and Si/Ge heterostructures
TL;DR: The anisotropic thermoelectric transport properties of bulk silicon strained in the [111]-direction were studied by detailed first-principles calculations focusing on a possible enhancement of the power factor.
References
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TL;DR: In this article, the authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices.
Journal ArticleDOI
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John Bardeen,William Shockley +1 more
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