Proceedings ArticleDOI
Threshold voltage roll-off for triple gate FinFET analysis based on several semiconductors used as substrate
Amitava Aditya,Sayan Basu,Saurav Khandelwal,Chiradeep Mukherjee,Saradindu Panda,Bansibadan Maji +5 more
- pp 1-6
TLDR
The analysis proves gallium nitride and silicon carbide as the most promising material for FinFET manufacturing industries and the "other than silicon” material in solid state device technology.Abstract:
The literature of power device must aware of the fact of proper tradeoff between the choice of semiconductor material and the proper oxide along with it. With the growing semiconductor technology, the traditional semiconductor now has the promising competitors like silicon carbide and gallium nitride.The simulation considers the calculation of minimum potential at the center plane of the FinFET channel through which roll-off of threshold voltage is measured. The analysis proves gallium nitride and silicon carbide as the most promising material for FinFET manufacturing industries. The drain to source voltage along with fin-height, fin thickness and channel length are varied keeping other parameters constant. The purpose of this work is to find out the “other than silicon” material in solid state device technology.read more
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Book
CMOS Voltage References: An Analytical and Practical Perspective
Chi-Wah Kok,Wing-Shan Tam +1 more
TL;DR: An analytical and practical perspective design of higherperformance cmos voltage controlled oscillators and sigma delta converters practical design guide from dummetts philosophical perspective philosophieperspectives in analytical philosophy s analytical tools for environmental design and management in a systems perspective.
ReportDOI
Symposium K: Silicon Carbide - Materials, Processing, and Devices
TL;DR: The second Symposium K as mentioned in this paper focused on new developments in the basic science of SiC materials as well as rapidly maturing device technologies, and the challenges in this field include understanding and decreasing defect densities in bulk SiC crystals, controlling morphology and residual impurities in epilayers, optimization of implant activation and oxide-SiC interfaces, and developing novel device structures.
References
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Journal ArticleDOI
FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
Digh Hisamoto,Wen-Chin Lee,J. Kedzierski,Hideki Takeuchi,K. Asano,C. Kuo,Erik H. Anderson,Tsu-Jae King,Jeffrey Bokor,Chenming Hu +9 more
TL;DR: In this paper, a self-aligned double-gate MOSFET, FinFET was proposed by using boron-doped Si/sub 04/Ge/sub 06/ as a gate material.
Journal ArticleDOI
CMOS scaling into the nanometer regime
Yuan Taur,Douglas A. Buchanan,Wei Chen,David J. Frank,Khalid EzzEldin Ismail,Shih-Hsien Lo,George Anthony Sai-Halasz,R. Viswanathan,Hsing-Jen Wann,Shalom J. Wind,Hon-Sum Philip Wong +10 more
TL;DR: In this article, the key challenges in further scaling of CMOS technology into the nanometer (sub-100 nm) regime in light of fundamental physical effects and practical considerations are discussed, including power supply and threshold voltage, short-channel effect, gate oxide, high-field effects, dopant number fluctuations and interconnect delays.
Journal ArticleDOI
FinFET design considerations based on 3-D simulation and analytical modeling
TL;DR: In this article, the authors investigated the design of the FinFET by 3D simulation and analytical modeling, and derived the threshold voltage (V/sub th/) rolloff and the subthreshold swing (S) by considering the source barrier changes in the most leaky channel path.
Journal ArticleDOI
A physical short-channel threshold voltage model for undoped symmetric double-gate MOSFETs
TL;DR: In this article, a compact, physical, short-channel threshold voltage model for undoped symmetric double-gate MOSFETs is derived based on an analytical solution of the two-dimensional (2-D) Poisson equation with the mobile charge term included.