Transient stress characterization of AlGaN/GaN HEMTs due to electrical and thermal effects
TLDR
Finite element simulation results of the transient stress response of an AlGaN/GaN high electron mobility transistor (HEMT) suggest transient failure mechanisms may differ from those previously studied under DC operation due to large amount of cyclic loading of a device around the gate structure.About:
This article is published in Microelectronics Reliability.The article was published on 2015-12-01 and is currently open access. It has received 34 citations till now. The article focuses on the topics: Stress (mechanics) & High-electron-mobility transistor.read more
Citations
More filters
Journal ArticleDOI
Electrothermal Reliability of the High Electron Mobility Transistor (HEMT)
TL;DR: In this article, the reliability of high electron mobility transistors (HEMT) is analyzed using First and Second Order Reliability Methods (FORM and SORM) and thermal modeling with Comsol multiphysics software.
Journal ArticleDOI
The Impact of Temperature on GaN/Si HEMTs Under RF Operation Using Gate Resistance Thermometry
TL;DR: In this article, the effect of the baseplate temperature on the device's thermal performance both under steady-state and RF operations was investigated, and a linear correlation was found between the power-added efficiency and the junction temperature.
Dissertation
Surface and mechanical stress effects in AlGaN/GaN high electron mobility transistors
TL;DR: Palacios et al. as discussed by the authors investigated the impact of surface cleanings, surface treatments and plasma-based dry etch conditions on two different types of ohmic contact technologies, and the influence of passivation films on the charge density in these structures was investigated, using A1203 passivation as a specific example.
Journal ArticleDOI
Finite Element Analysis of Fabrication- and Operation-Induced Mechanical Stress in AlGaN/GaN Transistors
TL;DR: In this paper, the authors modeled the mechanical stress resulting from fabrication and operation of AlGaN/GaN transistors using a finite element analysis approach, and the potential impact of mechanical stress on device reliability is also discussed.
Journal ArticleDOI
Effect of Stress-Dependent Thermal Conductivity on Thermo-Mechanical Coupling Behavior in GaN-Based Nanofilm Under Pulse Heat Source
TL;DR: In this article, the influence of stress-dependent thermal conductivity on the heat transfer behavior of a GaN-based nanofilm is investigated, where the finite element method is adopted to simulate the temperature distribution in a prestressed nanophilm under heat pulses.
References
More filters
Journal ArticleDOI
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
Oliver Ambacher,B. E. Foutz,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,A. J. Sierakowski,William J. Schaff,L.F. Eastman,Roman Dimitrov,A. Mitchell,Martin Stutzmann +12 more
TL;DR: In this paper, a combination of high resolution x-ray diffraction, atomic force microscopy, Hall effect, and capacitance-voltage profiling measurements is used to calculate the polarization induced sheet charge bound at the AlGaN/GaN interfaces.
Journal ArticleDOI
Uniaxial-process-induced strained-Si: extending the CMOS roadmap
TL;DR: In this article, a more complete data set of n-and p-channel MOSFET piezoresistance and strain-altered gate tunneling is presented along with new insight into the physical mechanisms responsible for hole mobility enhancement.
Journal ArticleDOI
Elastic constants of gallium nitride
TL;DR: The elastic constants of GaN have been determined using Brillouin scattering; in GPa they are: C11=390, C33=398, C44=105, C66=123, C12=145, and C13=106.
Journal ArticleDOI
Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives
Gaudenzio Meneghesso,Giovanni Verzellesi,F. Danesin,Fabiana Rampazzo,Franco Zanon,Augusto Tazzoli,Matteo Meneghini,Enrico Zanoni +7 more
TL;DR: In this article, failure modes and mechanisms of AlGaN/GaN high-electron-mobility transistors are reviewed, and data from three de-accelerated tests are presented, which demonstrate a close correlation between failure mode and bias point.
Journal ArticleDOI
GaN HEMT reliability
J.A. del Alamo,Jungwoo Joh +1 more
TL;DR: This paper reviews the experimental evidence behind a new failure mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress and suggests several paths to enhance the electrical reliability of GaN HEMTs.