Transient stress characterization of AlGaN/GaN HEMTs due to electrical and thermal effects
TLDR
Finite element simulation results of the transient stress response of an AlGaN/GaN high electron mobility transistor (HEMT) suggest transient failure mechanisms may differ from those previously studied under DC operation due to large amount of cyclic loading of a device around the gate structure.About:
This article is published in Microelectronics Reliability.The article was published on 2015-12-01 and is currently open access. It has received 34 citations till now. The article focuses on the topics: Stress (mechanics) & High-electron-mobility transistor.read more
Citations
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Journal ArticleDOI
Characterization of AlGaN/GaN HEMTs Using Gate Resistance Thermometry
Georges Pavlidis,Spyridon Pavlidis,Eric R. Heller,Elizabeth A. Moore,Ramakrishna Vetury,Samuel Graham +5 more
TL;DR: In this article, gate resistance thermometry (GRT) was used to determine the channel temperature of AlGaN/GaN high electron-mobility transistors under various bias conditions.
Journal ArticleDOI
Self-Heating and Equivalent Channel Temperature in Short Gate Length GaN HEMTs
TL;DR: In this paper, the authors studied the self-heating mechanism and its impact on electrical performance of short gate length GaN high electron mobility transistors (HEMTs) based on electrothermal TCAD simulations.
Journal ArticleDOI
Transient Thermal Characterization of AlGaN/GaN HEMTs Under Pulsed Biasing
TL;DR: In this article, the authors used transient thermoreflectance imaging (TTI) to measure the temperature rise of the passivated gate metal measured by TTI and the averaged gate temperature monitored by gate resistance thermometry (GRT).
Development of a Versatile Physics-Based Finite-Element Model of an AlGaN/GaN HEMT Capable of Accommodating Process and Epitaxy Variations and Calibrated Using Multiple DC Parameters (Postprint)
TL;DR: In this article, a physics-based finite element model of operation of an AlGaN/GaN HEMT with device geometry inputs taken from transmission electron microscope cross sections and calibrated by comparison with measured electrical data comprising standard field-effect transistor metrics and less well-known model parameters is presented.
Proceedings ArticleDOI
Failure Mechanisms of Cascode GaN HEMTs Under Overvoltage and Surge Energy Events
TL;DR: In this paper, the surge-energy robustness of a 650-V rated cascode GaN HEMT in the unclamped inductive clamping (UIS) test was investigated.
References
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Journal ArticleDOI
TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs
U. Chowdhury,Jose L. Jimenez,C. Lee,Paul Saunier,Tony Balistreri,Seong-Yong Park,Taehun Lee,J. Wang,M.J. Kim,Jungwoo Joh,J.A. del Alamo +10 more
TL;DR: In this paper, high-electron mobility transistors were studied using transmission electron microscopy for evidence of physical damage, and the formation of these defects is consistent with the theory of damage from the inverse piezoelectric effect.
Journal ArticleDOI
Elastic stiffness and thermal expansion coefficients of various refractory silicides and silicon nitride films
T.F. Retajczyk,A.K. Sinha +1 more
TL;DR: In this paper, the elestic stiffness parameter E f (1−ν f ) and the thermal expansion coefficient αf were obtained for four different silicides (TiSi2, TaSi2 and MoSi2) and for two different nitrides (chemically vapor-deposited Nitrox Si3N4 and r.f. plasma SiN) from stress-temperature measurements on identical films deposited on two different substrate materials.
Journal ArticleDOI
Thermal conductivity and electrical properties of 6H silicon carbide
TL;DR: In this article, thermal conductivity measurements of 6H SiC crystals were done in the 300-500 K range by means of radiation thermometry, and it was found that the thermal conductivities normal to the c axis is proportional to T−1.49, the room temperature value being 3.87 W/cm
Journal ArticleDOI
Thermal resistance calculation of AlGaN-GaN devices
TL;DR: In this paper, an accurate closed-form expression for the thermal resistance of a multifinger AlGaN-GaN high electron-mobility transistor (HEMT) device on a variety of host substrates including SiC, Si, and sapphire, as well as the case of a single-crystal GaN wafer.
Journal ArticleDOI
Temperature dependence of the thermal expansion of GaN
TL;DR: In this article, the thermal expansion of hexagonal GaN bulk crystals was studied in an extended temperature range from $12\phantom{\rule{0.3em}{0ex}}\text{to}\phantom{ 0.3m}{ 0ex}}