Journal ArticleDOI
Voltage switching of a VO2 memory metasurface using ionic gel
Michael Goldflam,Mengkun Liu,B. C. Chapler,H. T. Stinson,A. J. Sternbach,Alexander McLeod,Jingdi Zhang,Kun Geng,Matthew Royal,Bong-Jun Kim,Richard D. Averitt,Nan Marie Jokerst,David R. Smith,Hyun-Tak Kim,Dimitri Basov +14 more
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TLDR
In this article, an electrolyte-based voltage tunable vanadium dioxide (VO2) memory metasurface was demonstrated for large spatial scale, low voltage, non-volatile switching of terahertz (THz) resonances.Abstract:
We demonstrate an electrolyte-based voltage tunable vanadium dioxide (VO2) memory metasurface. Large spatial scale, low voltage, non-volatile switching of terahertz (THz) metasurface resonances is achieved through voltage application using an ionic gel to drive the insulator-to-metal transition in an underlying VO2 layer. Positive and negative voltage application can selectively tune the metasurface resonance into the “off” or “on” state by pushing the VO2 into a more conductive or insulating regime respectively. Compared to graphene based control devices, the relatively long saturation time of resonance modification in VO2 based devices suggests that this voltage-induced switching originates primarily from electrochemical effects related to oxygen migration across the electrolyte–VO2 interface.read more
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Journal ArticleDOI
A review of metasurfaces: physics and applications.
TL;DR: Recent progress in the physics of metasurfaces operating at wavelengths ranging from microwave to visible is reviewed, with opinions of opportunities and challenges in this rapidly developing research field.
Journal ArticleDOI
Phase-change materials for non-volatile photonic applications
TL;DR: Materials whose optical properties can be reconfigured are crucial for photonic applications such as optical memories and phase-change materials offer such utility and recent progress is reviewed.
Journal ArticleDOI
Gate-Tunable Conducting Oxide Metasurfaces
Yao-Wei Huang,Ho Wai Howard Lee,Ruzan Sokhoyan,Ragip Pala,Krishnan Thyagarajan,Seung-hoon Han,Din Ping Tsai,Harry A. Atwater,Harry A. Atwater +8 more
TL;DR: In principle, electrically gated phase and amplitude control allows for electrical addressability of individual metasurface elements and opens the path to applications in ultrathin optical components for imaging and sensing technologies, such as reconfigurable beam steering devices, dynamic holograms, tunable ultrathins, nanoprojectors, and nanoscale spatial light modulators.
Journal ArticleDOI
Fundamentals and Applications of Metasurfaces
TL;DR: Metasurfaces have become a rapidly growing field of research in recent years due to their exceptional abilities in light manipulation and versatility in ultrathin optical applications and are promising for integration with on-chip nanophotonic devices owing to their planar profiles.
Journal ArticleDOI
Endeavor of Iontronics: From Fundamentals to Applications of Ion-Controlled Electronics
TL;DR: The recent developments of electronic devices are highlighted, based on electric double layers formed at the interface between ionic conductors and various electronic conductors including organics and inorganics (oxides, chalcogenide, and carbon-based materials).
References
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Journal ArticleDOI
Memristive devices for computing
TL;DR: The performance requirements for computing with memristive devices are examined and how the outstanding challenges could be met are examined.
PatentDOI
Active terahertz metamaterial devices
TL;DR: An active metamaterial device capable of efficient real-time control and manipulation of terahertz radiation is demonstrated, which enables modulation of THz transmission by 50 per cent, an order of magnitude improvement over existing devices.
Journal ArticleDOI
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
Myoung-Jae Lee,Chang Bum Lee,Dongsoo Lee,Seung Ryul Lee,Man Chang,Ji-Hyun Hur,Young-Bae Kim,Chang-Jung Kim,David H. Seo,Sunae Seo,U-In Chung,In-Kyeong Yoo,Kinam Kim +12 more
TL;DR: This work demonstrates a TaO(x)-based asymmetric passive switching device with which it was able to localize resistance switching and satisfy all aforementioned requirements, and eliminates any need for a discrete transistor or diode in solving issues of stray leakage current paths in high-density crossbar arrays.
Journal ArticleDOI
Mott Transition in VO2 Revealed by Infrared Spectroscopy and Nano-Imaging
M. Mumtaz Qazilbash,M. Brehm,Byung-Gyu Chae,Pei-Chun Ho,Gregory O. Andreev,Bong-Jun Kim,Sun Jin Yun,Alexander V. Balatsky,M. B. Maple,Fritz Keilmann,Hyun-Tak Kim,Dimitri Basov +11 more
TL;DR: The electronic properties of a prototypical correlated insulator vanadium dioxide in which the metallic state can be induced by increasing temperature is reported, setting the stage for investigations of charge dynamics on the nanoscale in other inhomogeneous correlated electron systems.
Journal ArticleDOI
Reproducible switching effect in thin oxide films for memory applications
TL;DR: In this article, it was shown that positive or negative voltage pulses can switch the resistance of the oxide films between a low- and a high-impedance state in times shorter than 100 ns.