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Shuit-Tong Lee

Researcher at Soochow University (Suzhou)

Publications -  1129
Citations -  84313

Shuit-Tong Lee is an academic researcher from Soochow University (Suzhou). The author has contributed to research in topics: Silicon & Nanowire. The author has an hindex of 138, co-authored 1121 publications receiving 77112 citations. Previous affiliations of Shuit-Tong Lee include University of British Columbia & Hong Kong University of Science and Technology.

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Flat layered structure and improved photoluminescence emission from porous silicon microcavities formed by pulsed anodic etching

TL;DR: In this article, a singlemode, highly directional and stable photo- luminescence (PL) emission has been achieved from porous silicon microcavities (PSMs) fabricated by pulsed electro-chemical etching.
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Microstructure observations of silicon carbide nanorods

TL;DR: In this paper, the microstructures of β-SiC nanorods synthesized by hot-filament chemical vapor deposition were studied in detail by high-resolution electron microscopy.
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Fabrication and Characterization of Pure and Well-Aligned Carbon Nanotubes Using Methane/Nitrogen−Ammonia Plasma

TL;DR: In this paper, a well-aligned multiwalled carbon nanotubes (CNTs) were grown by microwave plasma-enhanced chemical vapor deposition using N 2 and NH 3 as the carrier gases and CH 4 as the carbon source.
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Hysteresis in In2O3:Zn nanowire field-effect transistor and its application as a nonvolatile memory device

TL;DR: In this article, the authors show an enormous hysteresis in zinc-doped In2O3 nanowire field effect transistors and propose that chemical species such as water molecules adsorbed on the devices and surface oxygen defects in the amorphous layer mainly originated from Zn2+ substitution of In3+ are the main causes of the large hystresis and the nonvolatile memory effect.
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The role of cesium fluoride as an n-type dopant on electron transport layer in organic light-emitting diodes

TL;DR: In this article, the role of cesium fluoride (CsF) doping on the enhanced electron transport properties of tris-(8-hydroxyquinolin) aluminum (Alq 3 ) for organic light-emitting diodes was investigated.