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Shuit-Tong Lee

Researcher at Soochow University (Suzhou)

Publications -  1129
Citations -  84313

Shuit-Tong Lee is an academic researcher from Soochow University (Suzhou). The author has contributed to research in topics: Silicon & Nanowire. The author has an hindex of 138, co-authored 1121 publications receiving 77112 citations. Previous affiliations of Shuit-Tong Lee include University of British Columbia & Hong Kong University of Science and Technology.

Papers
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Journal ArticleDOI

X-ray absorption studies on cubic boron nitride thin films

X. T. Zhou, +6 more
- 11 Jan 2007 - 
TL;DR: In this article, boron and nitrogen K-edge angle-resolved x-ray absorption near-edge structure in both total electron yield and fluorescence yield modes was investigated.
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Electron diffraction study of octagonal-cubic phase transitions in Mn-Si-Al

L. Xu, +3 more
- 01 Aug 2000 - 
TL;DR: In this article, two kinds of octagonal-cubic transition to either the β-Mn-type structure or the µ-Si-Al crystal were observed following annealing Mn-SiAl octagonal quasicrystal at different heating speeds.
Journal ArticleDOI

Innentitelbild: Ultrastable, Highly Fluorescent, and Water-Dispersed Silicon-Based Nanospheres as Cellular Probes (Angew. Chem. 1/2009)

Yao He, +7 more
- 01 Jan 2009 - 
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Fabrication and microstructures of Si composite nanocone arrays

Xiang-Min Meng, +6 more
- 01 Oct 2005 - 
TL;DR: In this paper, multi-layer Si composite cones with nano-scale diameter were fabricated by a simple ion sputtering method, and characterized with scanning electron microscopy (SEM), high-resolution transmission electron microscope (HRTEM), and electron energy loss spectroscopy.
Patent

Room temperature synthesis of multiwalled carbon nanostructures

Shuit-Tong Lee, +5 more
TL;DR: In this article, a simple chemical technique has been developed to grow large quantity of carbon nanostructures, including carbon nanotubes, hydrocarbon nanoteubes, and carbon nanoonions, in the organic solution at ambient (room) temperature and atmospheric pressure using silicon-nodes as starting materials.