S
Shuit-Tong Lee
Researcher at Soochow University (Suzhou)
Publications - 1129
Citations - 84313
Shuit-Tong Lee is an academic researcher from Soochow University (Suzhou). The author has contributed to research in topics: Silicon & Nanowire. The author has an hindex of 138, co-authored 1121 publications receiving 77112 citations. Previous affiliations of Shuit-Tong Lee include University of British Columbia & Hong Kong University of Science and Technology.
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Recent Advances in Cubic Boron Nitride Deposition
TL;DR: A review of recent progress in the deposition of thick, adherent, cubic boron nitride (c-BN) films is given in this paper, detailing the success of depositing thick (<20 μm), stress-free, adherent films with a larger crystallite size and significantly better crystalline quality.
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Microstructure and water-lubricated friction and wear properties of CrN(C) coatings with different carbon contents
Qianzhi Wang,Fei Zhou,Fei Zhou,Fei Zhou,Xiangdong Ding,Zhifeng Zhou,Chundong Wang,Wenjun Zhang,Lawrence Kwok-Yan Li,Shuit-Tong Lee +9 more
TL;DR: In this article, the authors used unbalanced magnetron sputtering via adjusting the carbon target current, and their microstructure and mechanical properties were characterized using Raman spectrum, X-ray photoelectron spectroscopy and nano-indenter, respectively.
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Influence of Ti content on the structure and tribological properties of Ti-DLC coatings in water lubrication
Qianzhi Wang,Fei Zhou,Fei Zhou,Fei Zhou,Zhifeng Zhou,Yang Yang,Ce Yan,Chundong Wang,Wenjun Zhang,Lawrence Kwok-Yan Li,Igor Bello,Shuit-Tong Lee +11 more
TL;DR: In this article, the influence of Ti content on the microstructure and phase composition of Ti-DLC films were studied systematically, and the tribological properties of TiDLC coatings sliding against Al2O3 balls in water were investigated using ball-on-disc tribometer.
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Manganese doping and optical properties of ZnS nanoribbons by postannealing
TL;DR: In this paper, the intrinsic photoluminescence (PL) peak at 585nm is attributed to Mn dopant and confirms Mn incorporation in ZnS, but does not appear without MnS, which is consistent with increased incorporation of Mn2+ ions.
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Gallium nitride nanowires doped with silicon
TL;DR: In this article, the growth of GaN nanowires is discussed in terms of the oxide-assisted metal-catalyst vapor-liquid-solid model, and the GaN was systematically characterized by scanning electron microscopy, transmission electron microscope, x-ray diffraction, Raman spectroscopy, and photoluminescence (PL).