S
Shuit-Tong Lee
Researcher at Soochow University (Suzhou)
Publications - 1129
Citations - 84313
Shuit-Tong Lee is an academic researcher from Soochow University (Suzhou). The author has contributed to research in topics: Silicon & Nanowire. The author has an hindex of 138, co-authored 1121 publications receiving 77112 citations. Previous affiliations of Shuit-Tong Lee include University of British Columbia & Hong Kong University of Science and Technology.
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Influence of the donor/acceptor interface on the open-circuit voltage in organic solar cells
TL;DR: In this paper, an ultrathin layer of MoO3 between the donor and acceptor increased the open-circuit voltage (VOC) from 0.45 to 0.85 V.
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Light trapping enhancement of inverted polymer solar cells with a nanostructured scattering rear electrode
TL;DR: In this article, a nanostructured backscattering rear electrode was used to achieve an improved cell performance by maintaining simultaneously high open circuit voltage and fill factor values, while providing excellent short-circuit current enhancement through efficient backscatter-induced light trapping.
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Photovoltaic Devices Based on Colloidal PbX Quantum Dots: Progress and Prospects
TL;DR: A certified power conversion efficiency (PCE) of 12.0% and an outstanding air stability has been achieved for PbX quantum dots (QDs) solar cells, indicating strong potential for next generation low-cost solution-processed photovoltaics as mentioned in this paper.
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The electronic structures and properties of Alq3 and NPB molecules in organic light emitting devices: Decompositions of density of states
TL;DR: In this paper, a decomposition treatment of density of states in combination with PM3 molecular orbital calculations was used to reveal the fingerprints of electronic structures of two prototypical electroluminescent molecules, tris(8-hydroxy-quinoline)aluminum (Alq3) and N,N′-bis(1-naphthyl)-N, N′-diphenyl-1,1-1′-biphenymyl-4,4-diamine (NPB).
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Oxide-assisted growth and characterization of Ge/SiOx nanocables
TL;DR: Germanium/SiOx nanocables were prepared via simple thermal evaporation of SiO and Ge powders in an alumina tube with Ar premixed with 5%H2 as the carrier gases as discussed by the authors.