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Shuit-Tong Lee

Researcher at Soochow University (Suzhou)

Publications -  1129
Citations -  84313

Shuit-Tong Lee is an academic researcher from Soochow University (Suzhou). The author has contributed to research in topics: Silicon & Nanowire. The author has an hindex of 138, co-authored 1121 publications receiving 77112 citations. Previous affiliations of Shuit-Tong Lee include University of British Columbia & Hong Kong University of Science and Technology.

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Mechanism of Cs2CO3 as an n-type dopant in organic electron-transport film

TL;DR: In this paper, the electronic structures of cesium carbonate (Cs2CO3) doped 4,7-diphenyl-1,10-phenanthroline (BPhen) films with various doping concentration are characterized by in situ ultraviolet and x-ray photoelectron spectroscopies, in an attempt to understand the mechanism of electron-transport enhancement in Cs2 CO3-doped organic electrontransport layer for organic optoelectronic devices.
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Electronic structure of silicon nanowires: A photoemission and x-ray absorption study

TL;DR: In this paper, photoemission and x-ray absorption spectroscopy have been used to study silicon nanowires prepared by a laser ablation technique together with Si(100) and porous silicon.
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Size dependence of energy gaps in small carbon clusters: the origin of broadband luminescence

TL;DR: In this article, the authors classified the band-tail states of carbon-related films into localized and confined states, and showed that the localized states result from structural deviation from graphite-like configuration, and the associated luminescence may be described by using the conventional theory for amorphous materials.
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CdS/CdSe Double-Sensitized ZnO Nanocable Arrays Synthesized by Chemical Solution Method and Their Photovoltaic Applications

TL;DR: In this article, a facile chemical solution method was reported for the first time to synthesize CdS/CdSe double-sensitized ZnO nanocable arrays.
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Boron nanowires synthesized by laser ablation at high temperature

TL;DR: In this article, as-synthesized boron nanowires were characterized by means of scanning electron microscopy (SEM), TEM, selected area electron diffraction (SAED), and electron energy loss spectroscopy (EELS).