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Shuit-Tong Lee

Researcher at Soochow University (Suzhou)

Publications -  1129
Citations -  84313

Shuit-Tong Lee is an academic researcher from Soochow University (Suzhou). The author has contributed to research in topics: Silicon & Nanowire. The author has an hindex of 138, co-authored 1121 publications receiving 77112 citations. Previous affiliations of Shuit-Tong Lee include University of British Columbia & Hong Kong University of Science and Technology.

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Ion beam synthesis of amorphous carbon thin films containing metallic nanoclusters

TL;DR: In this paper, the synthesis of metallic nanoparticles during growth of an amorphous carbon matrix using mass selected ion beam deposition of carbon and metal ions was investigated using X-ray diffraction and transmission electron microscopy.
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Al–Ga interdiffusion, carbon acceptor diffusion, and hole reduction in carbon‐doped Al0.4Ga0.6As/GaAs superlattices: The As4 pressure effect

TL;DR: In this paper, a carbon doped Al0.4Ga0.6As/GaAs superlattices (SL) were annealed under different ambient As4 pressure conditions in the temperature range of 825 °C-960 C. The SL were doped with carbon to an initial acceptor concentration of ∼2.9×1019 cm−3.
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Nanocrystalline C–BN synthesized by mechanical alloying

TL;DR: In this paper, the hardness of the C 0.5(BN)0.5 plate was found to be twice that of graphite and three times that of nanocrystalline BN.
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Photoconductive properties of selenium nanowire photodetectors.

TL;DR: The diameters of the nanowire were found to have a significant influence on the response speed with smaller Se nanowires showing higher response speed and the mechanisms of photoconduction and factors affecting the performance of the photodetectors were elucidated.
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Role of transition metal oxides in the charge recombination layer used in tandem organic photovoltaic cells

TL;DR: In this paper, the authors investigated the mechanism of charge recombination in transition metal oxide-based interconnectors for tandem organic photovoltaic cells, where the interconnector is composed of an abrupt heterointerface between a Mg-doped 4,7-diphenyl-1,10-phenanthroline (Mg:BPhen) layer and a MoO3 film.