Journal ArticleDOI
Charge balancing in GaN-based 2-D electron gas devices employing an additional 2-D hole gas and its influence on dynamic behaviour of GaN-based heterostructure field effect transistors
Herwig Hahn,B. Reuters,Sascha Geipel,Meike Schauerte,Fouad Benkhelifa,Oliver Ambacher,Holger Kalisch,Andrei Vescan +7 more
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TLDR
In this paper, a 2-D hole gas (2DHG) was employed on top of the 2DEG to suppress the electric field peak in GaN-based heterostructure FETs.Abstract:
GaN-based heterostructure FETs (HFETs) featuring a 2-D electron gas (2DEG) can offer very attractive device performance for power-switching applications. This performance can be assessed by evaluation of the dynamic on-resistance Ron,dyn vs. the breakdown voltage Vbd. In literature, it has been shown that with a high Vbd, Ron,dyn is deteriorated. The impairment of Ron,dyn is mainly driven by electron injection into surface, barrier, and buffer traps. Electron injection itself depends on the electric field which typically peaks at the gate edge towards the drain. A concept suitable to circumvent this issue is the charge-balancing concept which employs a 2-D hole gas (2DHG) on top of the 2DEG allowing for the electric field peak to be suppressed. Furthermore, the 2DEG concentration in the active channel cannot decrease by a change of the surface potential. Hence, beside an improvement in breakdown voltage, also an improvement in dynamic behaviour can be expected. Whereas the first aspect has already been de...read more
Citations
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Journal ArticleDOI
Superjunction Power Devices, History, Development, and Future Prospects
TL;DR: The superjunction concept is compared to other methods of enhancing the conductivity of power devices (from bipolar to employment of wide-bandgap materials) to derive its set of benefits and limitations.
Journal ArticleDOI
Self-Aligned Process for Selectively Etched p-GaN-Gated AlGaN/GaN-on-Si HFETs
TL;DR: In this paper, a gate-first process for an enhancement-mode p-GaN-gated heterostructure field effect transistor with self-aligned structuring of the pGaN is proposed.
Journal ArticleDOI
Lateral Charge Transport in the Carbon-Doped Buffer in AlGaN/GaN-on-Si HEMTs
Indranil Chatterjee,Michael J. Uren,Serge Karboyan,Alexander Pooth,Peter Moens,Abhishek Banerjee,Martin Kuball +6 more
TL;DR: In this article, the vertical field generates a 2-D hole gas (2DHG) at the bottom of the GaN:C layer, with hole flow extending outside the isolated area, and the spread of the 2DHG outside the active area of the device strongly affects the result of substrate ramp measurements producing major differences between single and multifinger devices.
Journal ArticleDOI
The III-Nitride Double Heterostructure Revisited: Benefits for Threshold Voltage Engineering of MIS Devices
TL;DR: In this article, an analytical expression to predict the threshold voltage for a given double heterostructure device has not yet been derived, and neither an evaluation of the tradeoff between $V_{\mathrm {th}}$ and ON-state resistance has been performed to date.
Journal ArticleDOI
Electrical Characteristics of AlGaAs/GaAs Heterostructures With a Pair of 2-D Electron and Hole Channels
TL;DR: In this article, the authors have fabricated AlGaAs/GaAs four-terminal devices in which a pair of electron/hole channels is embedded and studied the transport properties of electrons and holes by operating the devices as FETs in which the conductance of one channel is controlled by using the other as a gate.
References
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Journal ArticleDOI
The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
TL;DR: In this article, the authors show that the cause of current collapse is a charging up of a second virtual gate, physically located in the gate drain access region, thus acting as a negatively charged virtual gate.
Journal ArticleDOI
Gallium nitride devices for power electronic applications
TL;DR: In this article, the authors discuss the properties of GaN that make it an attractive alternative to established silicon and emerging SiC power devices and present challenges and innovative solutions to creating enhancement-mode power switches.
Proceedings ArticleDOI
A new generation of high voltage MOSFETs breaks the limit line of silicon
TL;DR: In this article, the authors proposed a new device concept for high voltage power devices based on charge compensation in the drift region of the transistor, which achieved a shrink factor of 5 versus the actual state of the art in power MOSFETs.
Journal ArticleDOI
AlGaN/AlN/GaN high-power microwave HEMT
L. Shen,Sten Heikman,Brendan Jude Moran,Robert Coffie,N.-Q. Zhang,D. Buttari,I. P. Smorchkova,Stacia Keller,Steven P. DenBaars,Umesh K. Mishra +9 more
TL;DR: In this paper, a novel heterojunction AlGaN/AlN/GaN high-electron mobility transistor (HEMT) is discussed, where the insertion of the very thin AlN interfacial layer (/spl sim/1 nm) maintains high mobility at high sheet charge densities by increasing the effective /spl Delta/E/sub C/ and decreasing alloy scattering.
Journal ArticleDOI
Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications
Keisuke Shinohara,D. Regan,Yan Tang,Andrea Corrion,David F. Brown,Joel C. Wong,John F. Robinson,Helen Fung,Adele E. Schmitz,Thomas C. Oh,S. Kim,Peter Chen,Robert G. Nagele,Alexandros Margomenos,Miroslav Micovic +14 more
TL;DR: In this article, the authors report state-of-the-art high frequency performance of GaN-based high electron mobility transistors (HEMTs) and Schottky diodes achieved through innovative device scaling technologies such as vertically scaled enhancement and depletion mode (E/D mode) AlN/GaN/AlGaN double-heterojunction HEMT epitaxial structures.