Proceedings ArticleDOI
Electrical property modelling of photodiode type CMOS active pixel sensor (APS)
S.U. Ay
- pp 371-375
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TLDR
In this article, the electrical characteristics of photodiode (PD) type CMOS active pixel sensor (APS) pixel were modeled using BSIM3v3 threshold voltage equation for hand calculation with better than 2% peak-to-peak error for full back-gate bias and supply voltages for CMOS process technologies.Abstract:
In this research, few electrical characteristics of photodiode (PD) type CMOS active pixel sensor (APS) pixel were modeled. BSIM3v3 threshold voltage equation was simplified for hand calculation with better than 2% peak-to-peak error for full back-gate bias and supply voltages for CMOS process technologies that has minimum feature sizes between 0.18/spl mu/m and 2.0/spl mu/m. Two fitting function coefficients (FFC) were included in the BSIM threshold model equations for simplification of the equation. FFCs were extracted by using circuit simulation for given process. Using the simplified threshold equation, electrical characteristics of 3T CMOS PD-APS pixel were modeled. Models include; photodiode reset level, pixel amplifier signal range, and pixel reset level boosting factor. Models were evaluated by using wide variety of available CMOS process technologies and compared with the simulation results. Pixel reset level and signal range model equations produce better than 6% and 12% peak-to-peak accuracy with simple hand calculation, respectively. Models were also confirmed with a designed photodiode-type CMOS APS pixel. A CMOS photodiode type APS imager fabricated in a 0.5/spl mu/m, 2P3M, 5Volt CMOS process with 15/spl mu/m square pixel size was used for comparison.read more
Citations
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Journal ArticleDOI
A CMOS Energy Harvesting and Imaging (EHI) Active Pixel Sensor (APS) Imager for Retinal Prosthesis
TL;DR: A CMOS image sensor capable of imaging and energy harvesting on same focal plane is presented for retinal prosthesis and its efficiency was measured at different light levels.
Journal ArticleDOI
Boosted CMOS APS Pixel Readout for Ultra Low-Voltage and Low-Power Operation
TL;DR: It was shown that the proposed boosted readout does not increase the number of transistors in the 3T CMOS APS pixels nor degrade the image quality, and provides additional 31% dynamic range improvement on top of the seven times (7×) expansion attained by boosting the pixel reset signal.
Proceedings ArticleDOI
Boosted readout for CMOS APS pixels
TL;DR: In order to reduce power consumption and improve low-voltage operation capability of standard three transistor (3T) CMOS active pixel sensor (APS), new pixel readout is proposed utilizing supply boosting technique (SBT).
Journal ArticleDOI
Design and Simulations of an Energy Harvesting Capable CMOS Pixel for Implantable Retinal Prosthesis
TL;DR: In this paper, a new pixel was designed with the capability of imaging and energy harvesting for the retinal prosthesis implant in 0.18µm standard complementary metal oxide Semiconductor technology.
Journal ArticleDOI
Single event transient effects on 3T and 4T CMOS active pixel sensors for different technologies
TL;DR: 4T CMOS APS shown more radiation hardness than the 3T CMos APS and 32 nm technology exhibits lowest radiation-tolerant, indicating 4T has a higher radiation hardness.
References
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Journal Article
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TL;DR: In this article, the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
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A physical and scalable I-V model in BSIM3v3 for analog/digital circuit simulation
Yuhua Cheng,Min-Chie Jeng,Zhihong Liu,Jianhui Huang,Mansun Chan,Kai Chen,Ping Keung Ko,Chenming Hu +7 more
TL;DR: A new physical and continuous BSIM (Berkeley Short-Channel IGFET Model) I-V model in BSIM3v3 is presented for circuit simulation, which allows users to accurately describe the MOSFET characteristics over a wide range of channel lengths and widths for various technologies, and is attractive for statistical modeling.
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