Journal ArticleDOI
Leakage-Reduction Design Concepts for Low-Power Vertical Tunneling Field-Effect Transistors
TLDR
In this article, the authors investigated the performance of vertical band-to-band tunneling FETs whose operation is based on the enhancement of the gate-induced drain leakage mechanism of MOSFETs.Abstract:
Using an atomistic full-band quantum transport solver, we investigate the performances of vertical band-to-band tunneling FETs (TFETs) whose operation is based on the enhancement of the gate-induced drain leakage mechanism of MOSFETs, and we compare them to lateral p-i-n devices. Although the vertical TFETs offer larger tunneling areas and therefore larger on currents than their lateral counterparts, they suffer from lateral source-to-drain tunneling leakage away from the gate contact. We propose a design improvement to reduce the off current of the vertical TFETs, maintain large on currents, and provide steep subthreshold slopes.read more
Citations
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Journal ArticleDOI
Tunnel Field-Effect Transistors: State-of-the-Art
Hao Lu,Alan Seabaugh +1 more
TL;DR: In this paper, the development of tunnel field-effect transistors (TFETs) is reviewed by comparing experimental results and theoretical predictions against 16-nm FinFET CMOS technology.
Journal ArticleDOI
Effect of Drain Doping Profile on Double-Gate Tunnel Field-Effect Transistor and its Influence on Device RF Performance
TL;DR: In this article, the effect of drain doping profile on a double-gate tunnel field effect transistor (DG-TFET) and its radio-frequency (RF) performances was investigated.
Journal ArticleDOI
Optimization of Gate-on-Source-Only Tunnel FETs With Counter-Doped Pockets
Kuo-Hsing Kao,Anne S. Verhulst,William G. Vandenberghe,Bart Sorée,Wim Magnus,Daniele Leonelli,Guido Groeseneken,K. De Meyer +7 more
TL;DR: In this paper, a gate-on-source tunnel FET with a counter-doped parallel pocket under the gate-source overlap was investigated and shown to have a steeper sub-threshold slope and higher ON-current than a gate on the channel.
Journal ArticleDOI
Study and Analysis of the Effects of SiGe Source and Pocket-Doped Channel on Sensing Performance of Dielectrically Modulated Tunnel FET-Based Biosensors
TL;DR: In this article, the effect of use of silicon-germanium (SiGe) source and n+-pocket-doped channel is investigated with the help of extensive device-level simulations.
Journal ArticleDOI
Performance of AlGaSb/InAs TFETs With Gate Electric Field and Tunneling Direction Aligned
Yeqing Lu,Guangle Zhou,Rui Li,Qingmin Liu,Qin Zhang,T. Vasen,Soo Doo Chae,T. Kosel,Mark A. Wistey,Huili Xing,Alan Seabaugh,Patrick Fay +11 more
TL;DR: In this article, the currentvoltage characteristics of AlGaSb/InAs staggered-gap n-channel tunnel field effect transistors are simulated in a geometry in which the gate electric field is oriented to be in the same direction as the tunnel junction internal field.
References
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Book
Many-Particle Physics
TL;DR: In this article, the authors present a model for the second quantization of a particle and show that it can be used to construct a pair distribution function with respect to a pair of spinless fermions.
Journal ArticleDOI
Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec
TL;DR: In this paper, a 70-nm n-channel tunneling field effect transistor (TFET) with sub-threshold swing (SS) of 52.8 mV/dec at room temperature was demonstrated.
Journal ArticleDOI
Band-to-band tunneling in carbon nanotube field-effect transistors.
TL;DR: How the structure of the nanotube is the key enabler of this particular one-dimensional tunneling effect is discussed, which is controlled here by the valence and conduction band edges in a bandpass-filter-like arrangement.
Proceedings ArticleDOI
Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and ≪60mV/dec subthreshold slope
TL;DR: In this paper, a Double-Gate, Strained-Ge, Heterostructure Tunneling FET (TFET) exhibiting very high drive currents and SS < 60 mV/dec was experimentally demonstrated.
Journal ArticleDOI
Atomistic simulation of nanowires in the sp3d5s* tight-binding formalism: From boundary conditions to strain calculations
TL;DR: In this article, the transmission coefficients and the density of states of biased and unbiased Si and GaAs nanowires are simulated using the $s{p}^{3d}^{5}{s}^{*}$ empirical tight-binding method.