Journal ArticleDOI
Low threading dislocation density Ge deposited on Si (1 0 0) using RPCVD
TLDR
In this paper, the threading dislocation density (TDD) is decreased with increasing Ge thickness and further decayed by cyclic annealing process, which is shown to increase the surface roughness.Abstract:
Threading dislocation density as function of Ge thickness deposited with different annealing processes. AFM images of 4.7 μm thick Ge deposited without annealing process and Ge deposited with cyclic annealing process.► Smooth Ge layer growth on Si (100) surface without graded SiGe buffer is performed using RPCVD. ► Threading dislocation density (TDD) is decreased with increasing Ge thickness. ► TDD is decreased by postannealing and further decease is observed by cyclic annealing. ► TDD of 7×10
5
cm
−2
without degrading surface roughness is achieved.read more
Citations
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Journal ArticleDOI
Zero-bias 40Gbit/s germanium waveguide photodetector on silicon.
Laurent Vivien,A. Polzer,Delphine Marris-Morini,Johann Osmond,Jean-Michel Hartmann,Paul Crozat,Eric Cassan,Christophe Kopp,Horst Zimmermann,Jean-Marc Fedeli +9 more
TL;DR: A very high optical bandwidth, estimated up to 120GHz, was evidenced in 10 µm long Ge photodetectors selectively grown at the end of silicon waveguides using three kinds of experimental set-ups.
Journal ArticleDOI
Epitaxial growth of strained and unstrained GeSn alloys up to 25% Sn
TL;DR: In this article, an ultra-low temperature molecular beam epitaxy process was used to construct metastable GeSn layers on Si substrates with Sn contents up to 20% and 25%, respectively.
Journal ArticleDOI
Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach
Giovanni Capellini,Grzegorz Kozlowski,Yuji Yamamoto,M. Lisker,Christian Wenger,Gang Niu,Peter Zaumseil,Bernd Tillack,A. Ghrib,M. de Kersauson,M. El Kurdi,Philippe Boucaud,Thomas Schroeder +12 more
TL;DR: In this paper, the tensile strain distribution and photoluminescence in Ge microstructures fabricated by means of a Si-CMOS compatible method was analyzed using a SiN stressor layer.
Journal ArticleDOI
Enhanced Sn incorporation in GeSn epitaxial semiconductors via strain relaxation
TL;DR: In this article, the authors investigate the effect of strain on the morphology and composition of GeSn layers grown on Ge/Si virtual substrates and demonstrate that the lattice parameter can be tuned to reduce the strain in the growing top layer (TL) leading to the incorporation of Sn up to 18.5% and higher.
Journal ArticleDOI
Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates.
Afzal Khan,Sk Masiul Islam,Sk Masiul Islam,Shahzad Ahmed,Rishi Ranjan Kumar,Mohammad Rezwan Habib,Kun Huang,Ming Hu,Xuegong Yu,Deren Yang +9 more
TL;DR: The recent progress of metal‐catalyst free direct CVD growth of graphene on technologically important dielectric and semiconducting substrates and Si and Ge substrates are reviewed, which are necessary for next generation graphene/Si/Ge based hybrid electronic devices.
References
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Journal ArticleDOI
Dislocation-free Stranski-Krastanow growth of Ge on Si(100).
D. J. Eaglesham,M. Cerullo +1 more
TL;DR: It is shown that the islands formed in Stranski-Krastanow (SK) growth of Ge on Si(100) are initially dislocation free, and the limiting critical thickness of coherent SK islands is shown to be higher than that for 2D growth.
Journal ArticleDOI
Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing
TL;DR: In this paper, a method of controlling threading dislocation densities in Ge on Si involving graded SiGe layers and chemical-mechanical polishing (CMP) is presented.
Journal ArticleDOI
Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/Si
Lorenzo Colace,Gianlorenzo Masini,F. Galluzzi,Gaetano Assanto,Giovanni Capellini,L. Di Gaspare,Elia Palange,Florestano Evangelisti +7 more
TL;DR: In this paper, a metal-semiconductor-metal photodetector based on relaxed Ge layers, epitaxially grown on silicon after insertion of a low-temperature-grown Ge buffer layer, was presented.
Journal ArticleDOI
Reduced pressure–chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-μm photodetection
J.M. Hartmann,Alexandra Abbadie,A.M. Papon,P. Holliger,G. Rolland,T. Billon,Jean-Marc Fedeli,Mathieu Rouviere,Laurent Vivien,S. Laval +9 more
TL;DR: In this paper, the structural and optical properties of Ge-based photodetectors operating in the low loss windows (1.3-1.6 μm) of silica fibers are investigated.
Journal ArticleDOI
High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers
TL;DR: In this paper, the authors have fabricated integrated Ge photodiodes on a graded optimized relaxed SiGe buffer on silicon substrates, and the dark current in the Ge mesa diodes, Js=0.15 mA/cm2, is close to the theoretical reverse saturation current and is a record low for Ge diodors integrated on Si substrates.