Journal ArticleDOI
Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing
TLDR
In this paper, a method of controlling threading dislocation densities in Ge on Si involving graded SiGe layers and chemical-mechanical polishing (CMP) is presented.Abstract:
A method of controlling threading dislocation densities in Ge on Si involving graded SiGe layers and chemical-mechanical polishing (CMP) is presented. This method has allowed us to grow a relaxed graded buffer to 100% Ge without the increase in threading dislocation density normally observed in thick graded structures. This sample has been characterized by transmission electron microscopy, etch-pit density, atomic force microscopy, Nomarski optical microscopy, and triple-axis x-ray diffraction. Compared to other relaxed graded buffers in which CMP was not implemented, this sample exhibits improvements in threading dislocation density and surface roughness. We have also made process modifications in order to eliminate particles due to gas-phase nucleation and cracks due to thermal mismatch strain. We have achieved relaxed Ge on Si with a threading dislocation density of 2.1×106 cm−2, and we expect that further process refinements will lead to lower threading dislocation densities on the order of bulk Ge su...read more
Citations
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High-performance Ge-on-Si photodetectors
TL;DR: In this article, the authors summarized the major developments in Ge-on-Si photodetectors, including epitaxial growth and strain engineering, free-space and waveguide-integrated devices, as well as recent progress in Geon-On-Si avalanche photodets.
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Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
Minjoo L. Lee,Eugene A. Fitzgerald,Mayank T. Bulsara,Matthew T. Currie,Anthony J. Lochtefeld +4 more
TL;DR: A review of the history and current progress in highmobility strained Si, SiGe, and Ge channel metal-oxide-semiconductor field effect transistors (MOSFETs) can be found in this article.
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Academic and industry research progress in germanium nanodevices
TL;DR: Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.
Book
Silicon Photonics Design: From Devices to Systems
TL;DR: In this article, the authors present the state-of-the-art in the field of fabless silicon photonic systems, including the following: 1.1 Optical Waveguide Mode Solver 2.2 Wave Propagation 2.3 Optoelectronic models 2.4 Microwave Modelling 2.5 Thermal Modeling 2.6 Photonic Circuit Modelling 3.7 Physical Layout 2.8 Software Tools Integration 3.4 Code Listings 4.5 Problems 4.7 Problems 5.4 Polarization 5.5 Problem 5.6 Code List
References
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Journal ArticleDOI
Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates
Eugene A. Fitzgerald,Ya-Hong Xie,Martin L. Green,D. Brasen,Ahmet Refik Kortan,Jurgen Michel,Y. J. Mii,B. E. Weir +7 more
TL;DR: In this article, the authors have grown compositionally graded GexSi1−x layers on Si at 900 °C with both molecular beam epitaxy and rapid thermal chemical vapor deposition techniques.
Journal ArticleDOI
Physics and applications of Ge x Si 1-x /Si strained-layer heterostructures
TL;DR: In this paper, the authors review recent advances in our current level of understanding of the physics underlying transport and optical properties of Ge x Si 1-x /Si strained-layer heterostructures.
Journal ArticleDOI
Relaxed GexSi1−x structures for III–V integration with Si and high mobility two‐dimensional electron gases in Si
Eugene A. Fitzgerald,Ya-Hong Xie,Don Monroe,P.J. Silverman,J. M. Kuo,Ahmet Refik Kortan,F. A. Thiel,B. E. Weir +7 more
TL;DR: In this article, a large lattice constant on Si has been obtained by growing compositionally graded GexSi1−x on Si, and these buffer layers have been characterized with electron-beam-induced current, transmission electron microscopy and x-ray diffraction to determine the extent of relaxation, threading dislocation density, the surface morphology, and the optical properties.
Journal ArticleDOI
Heterojunction bipolar transistors using Si-Ge alloys
TL;DR: In this article, the authors discuss the growth and properties of pseudomorphic Si/sub 1-x/Ge/sub x/ structures and then focus on their applications, especially the Si-sub 1 -x/ge/sub X/-base heterojunction bipolar transistor (HBT).
Journal ArticleDOI
High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer
TL;DR: In this paper, modulation-doped Si/SiGe heterostructures were grown on different types of partly relaxed SiGe buffer layers, which are required in this material system to obtain a large enough conduction band offset.