Journal ArticleDOI
Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
Maziar Farahmand,Carlo Garetto,Enrico Bellotti,K. F. Brennan,Michele Goano,E. Ghillino,Giovanni Ghione,John D. Albrecht,P. Paul Ruden +8 more
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TLDR
In this paper, a comprehensive study of the transport dynamics of electrons in the ternary compounds, Al/sub x/Ga/sub 1-x/N and In/sub ng/g/ng/s/n g/n/g n/g 1.x/n, is presented, which includes all of the major scattering mechanisms.Abstract:
We present a comprehensive study of the transport dynamics of electrons in the ternary compounds, Al/sub x/Ga/sub 1-x/N and In/sub x/Ga/sub 1-x/N. Calculations are made using a nonparabolic effective mass energy band model. Monte Carlo simulation that includes all of the major scattering mechanisms. The band parameters used in the simulation are extracted from optimized pseudopotential band calculations to ensure excellent agreement with experimental information and ab initio band models. The effects of alloy scattering on the electron transport physics are examined. The steady state velocity field curves and low field mobilities are calculated for representative compositions of these alloys at different temperatures and ionized impurity concentrations. A field dependent mobility model is provided for both ternary compounds AlGaN and InGaN. The parameters for the low and high field mobility models for these ternary compounds are extracted and presented. The mobility models can be employed in simulations of devices that incorporate the ternary III-nitrides.read more
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Book ChapterDOI
Lateral Power Transistors on Wide Bandgap Semiconductors
TL;DR: In this paper, the impact of the physical properties on electrical characteristics is explained and the benefits regarding power electronic and radio-frequency applications are discussed and the performance of GaN-based HEMTs in its current state is described.
Advanced Channel Engineering in III-Nitride HEMTs for High Frequency Performance
TL;DR: In this article, the authors present a table of dedications and acknowledgements for the first year of their work, and acknowledgments for the second year of the work, respectively.
Influence of multiple conduction channels on MISHEMT's intrinsic voltage gain
TL;DR: In this article , the influence of multiple channels of Si3N4/AlGaN/AlN/ GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor (MISHEMT) was analyzed focusing mainly on the transistor's analog performance.
Journal ArticleDOI
Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs
Maodan Ma,Yan-Rong Cao,Hanghang Lv,Zhiheng Wang,Xinxiang Zhang,Chuan Chen,Linshan Wu,Ling Lv,Xue-Feng Zheng,Wenchao Tian,Xiaohua Ma,Yue Hao +11 more
TL;DR: In this article , the authors used TCAD software to simulate the buffer traps in AlGaN/GaN high electron mobility transistors (HEMTs), and its effects on the breakdown performance and key parameters of the devices are investigated by changing the position and concentration of the acceptor traps in the buffer layer.
Journal ArticleDOI
Electron structure and charge-carrier effective masses in In x Ga1 - x N (x = 0.25, 0.5, and 0.75) cubic systems
TL;DR: The band structure of cubic Group-III nitride ternary compounds InxGa1 − xN (x = 0.25, 0.5, and 0.75) is calculated within the context of density functional theory in the pseudopotential approximation as mentioned in this paper.
References
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Journal ArticleDOI
GaN, AlN, and InN: A review
S. Strite,Hadis Morkoç +1 more
TL;DR: The status of research on both wurtzite and zinc-blende GaN, AlN, and InN and their alloys including exciting recent results is reviewed in this paper.
Journal ArticleDOI
Gan : processing, defects, and devices
TL;DR: The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed in this article, along with the influence of process-induced or grown-in defects and impurities on the device physics.
Journal ArticleDOI
Ionicity of the Chemical Bond in Crystals
TL;DR: The role of quantum-mechanical sum rules and spectral moments in constructing simplified models of bond and band behavior is explored in this article, where a wide range of physical properties including crystal structure, energy bands, elastic constants, ionization energies, and impurity states are discussed.
Journal ArticleDOI
Semiconductor ultraviolet detectors
TL;DR: In this paper, a comprehensive analysis of the developments in ultraviolet (UV) detector technology is described and the current state of the art of different types of semiconductor UV detectors is presented.
Journal ArticleDOI
Comparison of 6H-SiC, 3C-SiC, and Si for power devices
TL;DR: In this paper, the drift region properties of 6H- and 3C-SiC-based Schottky rectifiers and power MOSFETs that result in breakdown voltages from 50 to 5000 V are defined.
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