Journal ArticleDOI
Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
Maziar Farahmand,Carlo Garetto,Enrico Bellotti,K. F. Brennan,Michele Goano,E. Ghillino,Giovanni Ghione,John D. Albrecht,P. Paul Ruden +8 more
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TLDR
In this paper, a comprehensive study of the transport dynamics of electrons in the ternary compounds, Al/sub x/Ga/sub 1-x/N and In/sub ng/g/ng/s/n g/n/g n/g 1.x/n, is presented, which includes all of the major scattering mechanisms.Abstract:
We present a comprehensive study of the transport dynamics of electrons in the ternary compounds, Al/sub x/Ga/sub 1-x/N and In/sub x/Ga/sub 1-x/N. Calculations are made using a nonparabolic effective mass energy band model. Monte Carlo simulation that includes all of the major scattering mechanisms. The band parameters used in the simulation are extracted from optimized pseudopotential band calculations to ensure excellent agreement with experimental information and ab initio band models. The effects of alloy scattering on the electron transport physics are examined. The steady state velocity field curves and low field mobilities are calculated for representative compositions of these alloys at different temperatures and ionized impurity concentrations. A field dependent mobility model is provided for both ternary compounds AlGaN and InGaN. The parameters for the low and high field mobility models for these ternary compounds are extracted and presented. The mobility models can be employed in simulations of devices that incorporate the ternary III-nitrides.read more
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Dissertation
Optimisation numérique de cellules solaires à très haut rendement à base d’InGaN
TL;DR: In this paper, a nouvelle approche is proposed to evaluate the performance of cellules solaires based on the InGaN bande interdite modulable in fonction of the composition dindium, entre 0.7 eV a 3.4 eV.
Journal ArticleDOI
BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm
Towhidur Razzak,Hareesh Chandrasekar,Kamal Hussain,Choong Hee Lee,Abdullah Mamun,Hao Xue,Zhanbo Xia,Shahadat H. Sohel,Mohammad Wahidur Rahman,Sanyam Bajaj,Caiyu Wang,Wu Lu,Asif Khan,Siddharth Rajan +13 more
TL;DR: In this article, a Pt/BaTiO3/Al 0.58Ga0.42N lateral heterojunction diode with enhanced breakdown characteristics was demonstrated. But the performance of the device was limited to devices with an anode to cathode spacing of < 0.2μm.
Proceedings ArticleDOI
High-temperature modeling of AlGaN/GaN HEMTs
TL;DR: In this article, the authors present two-dimensional hydrodynamic simulations of AlGaN/GaN high electron mobility transistors (HEMTs) supported by measured data at high temperatures.
Journal ArticleDOI
Investigation of AlGaN Channel HEMTs on β-Ga2O3 Substrate for High-Power Electronics
C. S. Boopathi,Revathy A +1 more
TL;DR: In this article , the authors presented the DC characteristics of 0.8 µm gate length (LG) and 1 µm gating distance (LGD) AlGaN channel-based high electron mobility transistors (HEMTs) on ultra-wide bandgap β-Ga2O3 Substrate.
Journal ArticleDOI
High electron mobility of AlxGa1−xN evaluated by unfolding the DFT band structure
TL;DR: In this paper, the authors calculate the alloy-disorder-limited electron mobility of AlxGa1−xN from first principles and find the lowest alloy-scattering electron mobility (total electron mobility) across the entire composition range to be 186 c m 2 / V s ( 136 cm 2 /V s), which is comparable to the highest electron mobility predicted in the competitor system, β- ( Al x Ga 1 − x ) 2 O 3.
References
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Journal ArticleDOI
GaN, AlN, and InN: A review
S. Strite,Hadis Morkoç +1 more
TL;DR: The status of research on both wurtzite and zinc-blende GaN, AlN, and InN and their alloys including exciting recent results is reviewed in this paper.
Journal ArticleDOI
Gan : processing, defects, and devices
TL;DR: The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed in this article, along with the influence of process-induced or grown-in defects and impurities on the device physics.
Journal ArticleDOI
Ionicity of the Chemical Bond in Crystals
TL;DR: The role of quantum-mechanical sum rules and spectral moments in constructing simplified models of bond and band behavior is explored in this article, where a wide range of physical properties including crystal structure, energy bands, elastic constants, ionization energies, and impurity states are discussed.
Journal ArticleDOI
Semiconductor ultraviolet detectors
TL;DR: In this paper, a comprehensive analysis of the developments in ultraviolet (UV) detector technology is described and the current state of the art of different types of semiconductor UV detectors is presented.
Journal ArticleDOI
Comparison of 6H-SiC, 3C-SiC, and Si for power devices
TL;DR: In this paper, the drift region properties of 6H- and 3C-SiC-based Schottky rectifiers and power MOSFETs that result in breakdown voltages from 50 to 5000 V are defined.
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