Journal ArticleDOI
Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
Maziar Farahmand,Carlo Garetto,Enrico Bellotti,K. F. Brennan,Michele Goano,E. Ghillino,Giovanni Ghione,John D. Albrecht,P. Paul Ruden +8 more
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TLDR
In this paper, a comprehensive study of the transport dynamics of electrons in the ternary compounds, Al/sub x/Ga/sub 1-x/N and In/sub ng/g/ng/s/n g/n/g n/g 1.x/n, is presented, which includes all of the major scattering mechanisms.Abstract:
We present a comprehensive study of the transport dynamics of electrons in the ternary compounds, Al/sub x/Ga/sub 1-x/N and In/sub x/Ga/sub 1-x/N. Calculations are made using a nonparabolic effective mass energy band model. Monte Carlo simulation that includes all of the major scattering mechanisms. The band parameters used in the simulation are extracted from optimized pseudopotential band calculations to ensure excellent agreement with experimental information and ab initio band models. The effects of alloy scattering on the electron transport physics are examined. The steady state velocity field curves and low field mobilities are calculated for representative compositions of these alloys at different temperatures and ionized impurity concentrations. A field dependent mobility model is provided for both ternary compounds AlGaN and InGaN. The parameters for the low and high field mobility models for these ternary compounds are extracted and presented. The mobility models can be employed in simulations of devices that incorporate the ternary III-nitrides.read more
Citations
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Investigation of the Optimum Mg Doping Concentration in p-Type-Doped Layers of InGaN Blue Laser Diode Structures
Chibuzo Onwukaeme,Han-Youl Ryu +1 more
TL;DR: In this paper, the effect of the Mg doping concentration in the AlGaN electron blocking layer (EBL) and the Al-GaN p-cladding layer on the output power, forward voltage, and wall-plug efficiency of InGaN blue laser diode (LD) structures using numerical simulations was investigated.
Journal ArticleDOI
Influence of GaN/ZrO2 interfacial layer defects on 8-nm GaN-SOI-FinFET for reliable RFIC design
TL;DR: In this article, the reliability of GaN/ZrO2 (Gallium Nitride/Zirconium dioxide) interfacial layer defects on 8-nm GaN-SOI-FinFET was evaluated.
Journal ArticleDOI
Polarization engineering via InAlN/AlGaN heterostructures for demonstration of normally-off AlGaN channel field effect transistors
TL;DR: In this paper, the temperature dependences of the power figures of merit based on the conduction loss consideration in terms of 2DEG mobility variation and Johnson figure of merit show superior potential for polarization-matched InAlN/AlGaN HFETs in high-power and high-frequency electronics applications particularly operating at elevated temperatures.
Journal ArticleDOI
SLALOM: Open-source, portable, and easy-to-use solar cell optimizer. Application to the design of InGaN solar cells
TL;DR: This work proposes a new open-source and free solar cell optimizer: SLALOM − for SoLAr ceLl multivariate OptiMizer − that implements a rigorous multivariate approach, which improves from the one-parameter-at-a-time procedure that is traditionally used in the field to a state-of-the-art multivariate approaches.
Journal ArticleDOI
Electrical and Thermal Characteristics of AlGaN/GaN HEMT Devices with Dual Metal Gate Structure: A Theoretical Investigation
TL;DR: In this paper , the authors investigated the electrical and thermal properties of AlGaN/GaN high-electron mobility transistor (HEMT) devices with a dual-metal gate (DMG) structure.
References
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Journal ArticleDOI
GaN, AlN, and InN: A review
S. Strite,Hadis Morkoç +1 more
TL;DR: The status of research on both wurtzite and zinc-blende GaN, AlN, and InN and their alloys including exciting recent results is reviewed in this paper.
Journal ArticleDOI
Gan : processing, defects, and devices
TL;DR: The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed in this article, along with the influence of process-induced or grown-in defects and impurities on the device physics.
Journal ArticleDOI
Ionicity of the Chemical Bond in Crystals
TL;DR: The role of quantum-mechanical sum rules and spectral moments in constructing simplified models of bond and band behavior is explored in this article, where a wide range of physical properties including crystal structure, energy bands, elastic constants, ionization energies, and impurity states are discussed.
Journal ArticleDOI
Semiconductor ultraviolet detectors
TL;DR: In this paper, a comprehensive analysis of the developments in ultraviolet (UV) detector technology is described and the current state of the art of different types of semiconductor UV detectors is presented.
Journal ArticleDOI
Comparison of 6H-SiC, 3C-SiC, and Si for power devices
TL;DR: In this paper, the drift region properties of 6H- and 3C-SiC-based Schottky rectifiers and power MOSFETs that result in breakdown voltages from 50 to 5000 V are defined.
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